Issued Patents All Time
Showing 301–325 of 448 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6255216 | Methods of forming a contact having titanium silicide and titanium formed by chemical vapor deposition | Gurtej S. Sandhu, Kirk D. Prall, Sujit Sharan | 2001-07-03 |
| 6255209 | Methods of forming a contact having titanium formed by chemical vapor deposition | Gurtej S. Sandhu, Kirk D. Prall, Sujit Sharan | 2001-07-03 |
| 6254928 | Laser pyrolysis particle forming method and particle forming method | — | 2001-07-03 |
| 6235571 | Uniform dielectric layer and method to form same | — | 2001-05-22 |
| 6221779 | Self-aligned process for making contacts to silicon substrates during the manufacture of integrated circuits therein | Charles H. Dennison | 2001-04-24 |
| 6214726 | Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same | Gurtej S. Sandhu | 2001-04-10 |
| 6207571 | Self-aligned contact formation for semiconductor devices | Werner Juengling, Kirk D. Prall, Guy T. Blalock, David Dickerson, David S. Becker | 2001-03-27 |
| 6208425 | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers | Gurtej S. Sandhu | 2001-03-27 |
| 6208033 | Apparatus having titanium silicide and titanium formed by chemical vapor deposition | Gurtej S. Sandhu, Kirk D. Prall, Sujit Sharan | 2001-03-27 |
| RE37104 | Planarization of a gate electrode for improved gate patterning over non-planar active area isolation | Charles H. Dennison | 2001-03-20 |
| 6200842 | Method of forming complementary type conductive regions on a substrate | Charles H. Dennison | 2001-03-13 |
| 6194746 | Vertical diode structures with low series resistance | Fernando Gonzalez, Tyler Lowrey, Raymond A. Turi, Graham R. Wolstenholme | 2001-02-27 |
| 6184127 | Semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass, and a semiconductor structure | Charles H. Dennison | 2001-02-06 |
| 6174821 | Semiconductor processing method of depositing polysilicon | — | 2001-01-16 |
| 6171943 | Methods of forming a contact having titanium silicide formed by chemical vapor deposition | Gurtej S. Sandhu, Kirk D. Prall, Sujit Sharan | 2001-01-09 |
| 6159818 | Method of forming a container capacitor structure | D. Mark Durcan, Roger Lee, Fernando Gonzalez, Er-Xuan Ping | 2000-12-12 |
| 6150253 | Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same | D. Mark Durcan, Brent Gilgen | 2000-11-21 |
| 6124205 | Contact/via force fill process | — | 2000-09-26 |
| 6120347 | System for real-time control of semiconductor wafer polishing | Gurtej S. Sandhu | 2000-09-19 |
| 6111744 | Capacitor constructions having silicon nitride dielectric materials | — | 2000-08-29 |
| 6100162 | Method of forming a circuitry isolation region within a semiconductive wafer | Mark Durcan | 2000-08-08 |
| 6100144 | Semiconductor processing method of providing electrical isolation between adjacent semiconductor diffusion regions of different field effect transistors and integrated circuitry having adjacent electrically isolated field effect transistors | Charles H. Dennison | 2000-08-08 |
| 6084289 | Semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass, and a semiconductor structure | Charles H. Dennison | 2000-07-04 |
| 6081034 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | Gurtej S. Sandhu, Tyler Lowrey | 2000-06-27 |
| 6080672 | Self-aligned contact formation for semiconductor devices | Werner Juengling, Kirk D. Prall, Guy T. Blalock, David Dickerson, David S. Becker | 2000-06-27 |