WC

Wilbur G. Catabay

Lsi Logic: 57 patents #7 of 1,957Top 1%
LS Lsi: 13 patents #73 of 1,740Top 5%
🗺 California: #4,421 of 386,348 inventorsTop 2%
Overall (All Time): #29,554 of 4,157,543Top 1%
70
Patents All Time

Issued Patents All Time

Showing 26–50 of 70 patents

Patent #TitleCo-InventorsDate
6875693 Via and metal line interface capable of reducing the incidence of electro-migration induced voids Charles E. May 2005-04-05
6858531 Electro chemical mechanical polishing method Mei Zhu 2005-02-22
6812134 Dual layer barrier film techniques to prevent resist poisoning Hong-Qiang Lu, Wei-Jen Hsia 2004-11-02
6800940 Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning Richard Schinella 2004-10-05
6794756 Integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines Weidan Li, Wei-Jen Hsia 2004-09-21
6790784 Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure Wei-Jen Hsia 2004-09-14
6777807 Interconnect integration Valeriy Sukharev, Hongqiang Lu 2004-08-17
6774057 Method and structure for forming dielectric layers having reduced dielectric constants Hong-Qiang Lu, Wei-Jen Hsia 2004-08-10
6767832 In situ liner barrier Kiran Kumar, Zhihai Wang, Kai Zhang 2004-07-27
6756674 Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same Wei-Jen Hsia, Weidan Li, Joe W. Zhao 2004-06-29
6734560 Diamond barrier layer Zhihai Wang 2004-05-11
6727177 Multi-step process for forming a barrier film for use in copper layer formation Zhihai Wang, Ping Li 2004-04-27
6686272 Anti-reflective coatings for use at 248 nm and 193 nm Sang-Yun Lee, Masaichi Eda, Hongqiang Lu, Wei-Jen Hsia, Hiroaki Takikawa +1 more 2004-02-03
6613665 Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surface Wei-Jen Hsia 2003-09-02
6537896 Process for treating porous low k dielectric material in damascene structure to form a non-porous dielectric diffusion barrier on etched via and trench surfaces in the porous low k dielectric material Wei-Jen Hsia 2003-03-25
6528423 PROCESS FOR FORMING COMPOSITE OF BARRIER LAYERS OF DIELECTRIC MATERIAL TO INHIBIT MIGRATION OF COPPER FROM COPPER METAL INTERCONNECT OF INTEGRATED CIRCUIT STRUCTURE INTO ADJACENT LAYER OF LOW K DIELECTRIC MATERIAL Wei-Jen Hsia 2003-03-04
6518193 Substrate processing system Kiran Kumar, Zhihai Wang, Rudy Rios, Richard Schinella 2003-02-11
6503840 Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning Wei-Jen Hsia, Hong-Qiang Lu, Yong-Bae Kim, Kiran Kumar, Kai Zhang +2 more 2003-01-07
6492731 Composite low dielectric constant film for integrated circuit structure Wei-Jen Hsia, Kai Zhang 2002-12-10
6472314 Diamond barrier layer Zhihai Wang 2002-10-29
6423630 Process for forming low K dielectric material between metal lines Wei-Jen Hsia, Dung-Ching Perng 2002-07-23
6423628 Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines Weidan Li, Wei-Jen Hsia 2002-07-23
6420277 Process for inhibiting crack formation in low dielectric constant dielectric films of integrated circuit structure Wei-Jen Hsia, Hong Qiang 2002-07-16
6391795 Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning Richard Schinella 2002-05-21
6368979 Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure Zhihai Wang, Joe W. Zhao 2002-04-09