SM

Sasikanth Manipatruni

KC Kepler Computing: 263 patents #1 of 42Top 3%
IN Intel: 122 patents #135 of 30,777Top 1%
CU Cornell University: 9 patents #54 of 1,984Top 3%
CF Cornell Research Foundation: 1 patents #802 of 1,638Top 50%
GE: 1 patents #19,878 of 36,430Top 55%
📍 Portland, OR: #5 of 9,213 inventorsTop 1%
🗺 Oregon: #11 of 28,073 inventorsTop 1%
Overall (All Time): #633 of 4,157,543Top 1%
400
Patents All Time

Issued Patents All Time

Showing 176–200 of 400 patents

Patent #TitleCo-InventorsDate
11716086 Asynchronous circuit with majority gate or minority gate logic and 1-input threshold gate Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya 2023-08-01
11716085 Pull-up and pull-down networks controlled asynchronously by threshold gate logic Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya 2023-08-01
11716084 Pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logic Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya 2023-08-01
11716083 Asynchronous circuit with threshold logic Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya 2023-08-01
11711083 Majority gate based low power ferroelectric based adder with reset mechanism Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Guarav Thareja, Ramamoorthy Ramesh +1 more 2023-07-25
11705906 Majority logic gate having ferroelectric input capacitors and a pulsing scheme coupled to a conditioning logic Rajeev Kumar Dokania, Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Robert Menezes +1 more 2023-07-18
11705905 Multi-function ferroelectric threshold gate with input based adaptive threshold Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania 2023-07-18
11699699 Multi-function threshold gate with adaptive threshold and stacked planar ferroelectric capacitors Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania, Debo Olaosebikan 2023-07-11
11696514 Transition metal dichalcogenide based magnetoelectric memory device Chia-Ching Lin, Tanay Gosavi, Dmitri E. Nikonov, Benjamin Buford, Kaan Oguz +2 more 2023-07-04
11696451 Common mode compensation for non-linear polar material based 1T1C memory bit-cell Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya 2023-07-04
11696450 Common mode compensation for multi-element non-linear polar material based gain memory bit-cell Rajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya 2023-07-04
11694940 3D stack of accelerator die and multi-core processor die Amrita Mathuriya, Christopher B. Wilkerson, Rajeev Kumar Dokania, Debo Olaosebikan 2023-07-04
11694737 Write scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to word-line to minimize write disturb effects Rajeev Kumar Dokania, Amrita Mathuriya 2023-07-04
11688733 Method of adjusting threshold of a paraelectric capacitive-input circuit Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania 2023-06-27
11683939 Spin orbit memory devices with dual electrodes, and methods of fabrication Benjamin Buford, Angeline Smith, Noriyuki Sato, Tanay Gosavi, Kaan Oguz +5 more 2023-06-20
11670352 Apparatus and method for endurance of non-volatile memory banks via wear leveling and outlier compensation Christopher B. Wilkerson, Rajeev Kumar Dokania, Amrita Mathuriya 2023-06-06
11665975 Spin orbit coupling memory device with top spin orbit coupling electrode and selector Tanay Gosavi, Chia-Ching Lin, Ian A. Young 2023-05-30
11664371 Multi-function threshold gate with adaptive threshold and stacked planar paraelectric capacitors Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania, Debo Olaosebikan 2023-05-30
11664370 Multi-function paraelectric threshold gate with input based adaptive threshold Amrita Mathuriya, Rafael Rios, Ikenna Odinaka, Rajeev Kumar Dokania 2023-05-30
11664060 Writing scheme for multi-element gain ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches on the plate-lines of the bit-cell Rajeev Kumar Dokania, Amrita Mathuriya 2023-05-30
11659714 Ferroelectric device film stacks with texturing layer, and method of forming such Niloy Mukherjee, Ramamoorthy Ramesh, James David Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde +1 more 2023-05-23
11658664 Asynchronous circuit with majority gate or minority gate logic Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya 2023-05-23
11652487 Parallel pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logic Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya 2023-05-16
11652482 Parallel pull-up and pull-down networks controlled asynchronously by threshold logic gate Nabil Imam, Ikenna Odinaka, Rafael Rios, Rajeev Kumar Dokania, Amrita Mathuriya 2023-05-16
11646071 Reading scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches and control on plate-lines of the bit-cell Rajeev Kumar Dokania, Amrita Mathuriya 2023-05-09