Issued Patents All Time
Showing 25 most recent of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9543516 | Method for forming a doped metal oxide for use in resistive switching memory elements | Jinhong Tong, Randall J. Higuchi, Imran Hashim | 2017-01-10 |
| 9444047 | Embedded nonvolatile memory elements having resistive switching characteristics | Imran Hashim, Tony P. Chiang, Yun Wang | 2016-09-13 |
| 9318333 | Dielectric extension to mitigate short channel effects | Shankar Sinha, Jean Y. Yang, Phillip Jones | 2016-04-19 |
| 9269896 | Confined defect profiling within resistive random memory access cells | Yun Wang, Chien-Lan Hsueh | 2016-02-23 |
| 9246096 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Imran Hashim, Randall J. Higuchi, Tim Minvielle, Hieu Pham +1 more | 2016-01-26 |
| 9130165 | Atomic layer deposition of metal oxide materials for memory applications | Yun Wang, Tony P. Chiang, Imran Hashim, Dipankar Pramanik | 2015-09-08 |
| 9129894 | Embedded nonvolatile memory elements having resistive switching characteristics | Imran Hashim, Tony P. Chiang, Yun Wang | 2015-09-08 |
| 9087978 | Transition metal oxide bilayers | Hieu Pham, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more | 2015-07-21 |
| 9065040 | Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition | Chien-Lan Hsueh, Randall J. Higuchi, Takeshi Yamaguchi | 2015-06-23 |
| 9006026 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Imran Hashim, Randall J. Higuchi, Tim Minvielle, Hieu Pham +1 more | 2015-04-14 |
| 8987697 | Transition metal oxide bilayers | Hieu Pham, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more | 2015-03-24 |
| 8913418 | Confined defect profiling within resistive random memory access cells | Yun Wang, Chien-Lan Hsueh | 2014-12-16 |
| 8912518 | Resistive random access memory cells having doped current limiting layers | David Chi, Minh Huu Le, Minh Anh Nguyen, Dipankar Pramanik, Milind Weling | 2014-12-16 |
| 8906736 | Multifunctional electrode | Hieu Pham, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more | 2014-12-09 |
| 8883655 | Atomic layer deposition of metal oxide materials for memory applications | Yun Wang, Tony P. Chiang, Imran Hashim, Dipankar Pramanik | 2014-11-11 |
| 8883557 | Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition | Chien-Lan Hsueh, Randall J. Higuchi, Takeshi Yamaguchi | 2014-11-11 |
| 8859328 | Multifunctional electrode | Hieu Pham, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more | 2014-10-14 |
| 8846443 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Hieu Pham, Randall J. Higuchi, Imran Hashim, Tim Minvielle +1 more | 2014-09-30 |
| 8802492 | Method for forming resistive switching memory elements | Jinhong Tong, Randall J. Higuchi, Imran Hashim | 2014-08-12 |
| 8791445 | Interfacial oxide used as switching layer in a nonvolatile resistive memory element | Randall J. Higuchi, Tony P. Chiang, Ryan Clarke, Imran Hashim, Robert A. Huertas +1 more | 2014-07-29 |
| 8787066 | Method for forming resistive switching memory elements with improved switching behavior | Yun Wang, Tony P. Chiang, Imran Hashim | 2014-07-22 |
| 8779407 | Multifunctional electrode | Hieu Pham, Imran Hashim, Dipankar Pramanik, Yun Wang, Hong Sheng Yang | 2014-07-15 |
| 8741698 | Atomic layer deposition of zirconium oxide for forming resistive-switching materials | Jinhong Tong, Imran Hashim, Randall J. Higuchi, Albert S. Lee | 2014-06-03 |
| 8735217 | Multifunctional electrode | Hieu Pham, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more | 2014-05-27 |
| 8704203 | Transition metal oxide bilayers | Hieu Pham, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more | 2014-04-22 |