TW

Thomas Werner

Globalfoundries: 31 patents #82 of 4,424Top 2%
AM AMD: 23 patents #450 of 9,279Top 5%
SA Schott Ag: 2 patents #437 of 1,181Top 40%
FI Finisar: 1 patents #409 of 719Top 60%
FE Friedrich-Alexander-Universität Erlangen-Nürnberg: 1 patents #91 of 311Top 30%
FG Fhr Anlagenbau Gmbh: 1 patents #2 of 19Top 15%
UE US Dept of Energy: 1 patents #1,355 of 5,099Top 30%
Overall (All Time): #38,049 of 4,157,543Top 1%
61
Patents All Time

Issued Patents All Time

Showing 25 most recent of 61 patents

Patent #TitleCo-InventorsDate
10926431 Tool head and glass or glass ceramic article producible using the tool head Stefan Mischke, Marco Weisenburger 2021-02-23
10711311 Genomic rearrangements associated with prostate cancer and methods of using the same Shiv Srivastava, Albert Dobi, Gyorgy Petrovics, Martin Seifert, Matthias Scherf 2020-07-14
10370284 Monolithic support for full-surface support of a workpiece Thorsten Gehindy, Armin Thomas, Marco Weisenburger 2019-08-06
10014279 Methods of forming 3-D integrated semiconductor devices having intermediate heat spreading capabilities Michael Grillberger, Frank Feustel 2018-07-03
9822377 Mutant CD83 promoter and use thereof Alexander Steinkasserer, Marcello Stein, Ilka Knippertz 2017-11-21
9627317 Wafer with improved plating current distribution Oliver Aubel, Frank Feustel 2017-04-18
9455232 Semiconductor structure including a die seal leakage detection material, method for the formation thereof and method including a test of a semiconductor structure Frank Feustel, Oliver Aubel 2016-09-27
9362239 Vertical breakdown protection layer Oliver Aubel, Georg Talut 2016-06-07
9349641 Wafer with improved plating current distribution Oliver Aubel, Frank Feustel 2016-05-24
9318468 3-D integrated semiconductor device comprising intermediate heat spreading capabilities Michael Grillberger, Frank Feustel 2016-04-19
9245860 Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom Frank Feustel, Kai Frohberg 2016-01-26
8835303 Metallization system of a semiconductor device comprising extra-tapered transition vias Frank Feustel, Kai Frohberg 2014-09-16
8828887 Restricted stress regions formed in the contact level of a semiconductor device Kai Frohberg, Frank Feustel 2014-09-09
8735237 Method for increasing penetration depth of drain and source implantation species for a given gate height Uwe Griebenow, Kai Frohberg, Frank Feustel 2014-05-27
8716126 Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions Peter Baars, Frank Feustel 2014-05-06
8679924 Self-aligned multiple gate transistor formed on a bulk substrate Andy Wei, Vivien Schroeder, Thilo Scheiper, Johannes Groschopf 2014-03-25
8652341 Method and apparatus for structuring components made of a material composed of silicon oxide Thomas Gessner, Andreas Bertz, Reinhard Schubert, Wolfgang Hentsch, Reinhard Fendler +1 more 2014-02-18
8609524 Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier Kai Frohberg, Frank Feustal 2013-12-17
8482123 Stress reduction in chip packaging by using a low-temperature chip-package connection regime Michael Grillberger, Matthias Lehr 2013-07-09
8420533 Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding Robert Seidel 2013-04-16
8399352 Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions Peter Baars, Frank Feustel 2013-03-19
8377820 Method of forming a metallization system of a semiconductor device by using a hard mask for defining the via size Kai Frohberg, Frank Feustel 2013-02-19
8368221 Hybrid contact structure with low aspect ratio contacts in a semiconductor device Frank Feustel, Kai Frohberg 2013-02-05
8357610 Reducing patterning variability of trenches in metallization layer stacks with a low-k material by reducing contamination of trench dielectrics Frank Feustel, Michael Grillberger, Kai Frohberg 2013-01-22
8344474 Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones Robert Seidel 2013-01-01