| 10622368 |
Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof |
Senaka Kanakamedala, Raghuveer S. Makala, Rahul Sharangpani, Yao-Sheng Lee, James Kai |
2020-04-14 |
| 10355139 |
Three-dimensional memory device with amorphous barrier layer and method of making thereof |
Rahul Sharangpani, Raghuveer S. Makala, Keerti Shukla, Fei Zhou |
2019-07-16 |
| 9984963 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure |
Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Keerti Shukla |
2018-05-29 |
| 9893081 |
Ridged word lines for increasing control gate lengths in a three-dimensional memory device |
Senaka Kanakamedala, Rahul Sharangpani, Raghuveer S. Makala, Yao-Sheng Lee |
2018-02-13 |
| 9842907 |
Memory device containing cobalt silicide control gate electrodes and method of making thereof |
Raghuveer S. Makala, Sateesh Koka, Zhenyu Lu, Rahul Sharangpani |
2017-12-12 |
| 9812463 |
Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof |
Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou, Masanori Tsutsumi +4 more |
2017-11-07 |
| 9806089 |
Method of making self-assembling floating gate electrodes for a three-dimensional memory device |
Rahul Sharangpani, Raghuveer S. Makala, Yanli Zhang |
2017-10-31 |
| 9793139 |
Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines |
Rahul Sharangpani, Keerti Shukla, Raghuveer S. Makala, Yao-Sheng Lee |
2017-10-17 |
| 9780182 |
Molybdenum-containing conductive layers for control gate electrodes in a memory structure |
Raghuveer S. Makala, Sateesh Koka, Yao-Sheng Lee, Johann Alsmeier, George Matamis |
2017-10-03 |
| 9754958 |
Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof |
Jayavel Pachamuthu, Sateesh Koka, Raghuveer S. Makala |
2017-09-05 |
| 9698152 |
Three-dimensional memory structure with multi-component contact via structure and method of making thereof |
Sateesh Koka, Raghuveer S. Makala, Rahul Sharangpani, Matthias Baenninger, Jayavel Pachamuthu +1 more |
2017-07-04 |
| 9659955 |
Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure |
Rahul Sharangpani, Sateesh Koka, Raghuveer S. Makala, Senaka Kanakamedala |
2017-05-23 |
| 9646975 |
Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure |
Sateesh Koka, Raghuveer S. Makala |
2017-05-09 |
| 9576966 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure |
Raghuveer S. Makala, Sateesh Koka, Rahul Sharangpani |
2017-02-21 |
| 9530785 |
Three-dimensional memory devices having a single layer channel and methods of making thereof |
Sateesh Koka, Zhenyu Lu, Wei Zhao, Ching-Huang Lu, Henry Chien +6 more |
2016-12-27 |
| 9515079 |
Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack |
Sateesh Koka, Raghuveer S. Makala, Rahul Sharangpani, Yao-Sheng Lee, George Matamis +1 more |
2016-12-06 |