| 6960523 |
Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device |
Michael Maldei, David M. Dobuzinsky, Johnathan E. Faltermeier, Thomas Rupp, Chienfan Yu +3 more |
2005-11-01 |
| 6740539 |
Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
Richard A. Conti, David M. Dobuzinsky, Daniel C. Edelstein, Gill Yong Lee, Kia-Seng Low +3 more |
2004-05-25 |
| 6649531 |
Process for forming a damascene structure |
William J. Cote, Timothy J. Dalton, Daniel C. Edelstein, Scott D. Halle, Gill Yong Lee +1 more |
2003-11-18 |
| 6620699 |
Method for forming inside nitride spacer for deep trench device DRAM cell |
Arnd Scholz |
2003-09-16 |
| 6570256 |
Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
Richard A. Conti, David M. Dobuzinsky, Daniel C. Edelstein, Gill Yong Lee, Kia-Seng Low +3 more |
2003-05-27 |
| 6541810 |
Modified vertical MOSFET and methods of formation thereof |
Ramachandra Divakaruni, Rajeev Malik, Larry Nesbit |
2003-04-01 |
