JL

Jiong-Ping Lu

TI Texas Instruments: 60 patents #104 of 12,488Top 1%
Micron: 6 patents #2,080 of 6,345Top 35%
IBM: 1 patents #44,794 of 70,183Top 65%
Overall (All Time): #31,931 of 4,157,543Top 1%
67
Patents All Time

Issued Patents All Time

Showing 25 most recent of 67 patents

Patent #TitleCo-InventorsDate
11249644 Magnetic tape integration with distributed disk file systems Slavisa Sarafijanovic, Martin Petermann, Bo Zou, Jin Yin, Feng Shao +1 more 2022-02-15
9048180 Low stress sacrificial cap layer Periannan Chidambaram, Srinivasan Chakravarthi 2015-06-02
8835263 Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial SiGe Johan W. Weijtmans, Rick L. Wise 2014-09-16
8546259 Nickel silicide formation for semiconductor components Juanita DeLoach, Haowen Bu 2013-10-01
8088659 Method of forming capacitors Ming-Jang Hwang 2012-01-03
8053296 Capacitor formed on a recrystallized polysilicon layer Haowen Bu, Clint Montgomery 2011-11-08
7994073 Low stress sacrificial cap layer Periannan Chidambaram, Srinivasan Chakravarthi 2011-08-09
7943499 FUSI integration method using SOG as a sacrificial planarization layer Yaw S. Obeng, Ping Jiang, Joe G. Tran 2011-05-17
7732313 FUSI integration method using SOG as a sacrificial planarization layer Yaw S. Obeng, Ping Jiang, Joe G. Tran 2010-06-08
7732852 High-K dielectric materials and processes for manufacturing them Ming-Jang Hwang 2010-06-08
7732312 FUSI integration method using SOG as a sacrificial planarization layer Yaw S. Obeng, Ping Jiang, Joe G. Tran 2010-06-08
7666729 Method for improving the thermal stability of silicide Jiejie Xu 2010-02-23
7655555 In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability Richard Allen Faust, Qing Jiang 2010-02-02
7585738 Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device Shaofeng Yu, Freidoon Mehrad 2009-09-08
7544987 High-k dielectric materials and processes for manufacturing them Ming-Jang Hwang 2009-06-09
7448395 Process method to facilitate silicidation Freidoon Mehrad, Lindsey Hall, Vivian Liu, Clint Montgomery, Scott Francis Johnson 2008-11-11
7422967 Method for manufacturing a semiconductor device containing metal silicide regions Juanita DeLoach, Lindsey Hall, Lance Robertson, Donald Miles 2008-09-09
7422968 Method for manufacturing a semiconductor device having silicided regions Clint Montgomery, Lindsey Hall, Donald Miles, Duofeng Yue, Thomas D. Bonifiield 2008-09-09
7348265 Semiconductor device having a silicided gate electrode and method of manufacture therefor 2008-03-25
7341933 Method for manufacturing a silicided gate electrode using a buffer layer Shaofeng Yu, Haowen Bu, Lindsey Hall 2008-03-11
7338888 Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same Haowen Bu, Shaofeng Yu, Ping Jiang 2008-03-04
7335595 Silicide formation using a low temperature anneal process Lance Robertson, Donald Miles 2008-02-26
7253049 Method for fabricating dual work function metal gates Shaofeng Yu, Haowen Bu, Lindsey Hall, Mark Visokay 2007-08-07
7253124 Process for defect reduction in electrochemical plating Patricia B. Smith 2007-08-07
7208409 Integrated circuit metal silicide method Duofeng Yue, Xiaozhan Liu, Donald Miles, Lance Robertson 2007-04-24