Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11923321 | Three-dimensional memory device including dielectric rails for warpage reduction and method of making the same | Shin Sakiyama, Kenzo IIZUKA, Takayuki Yokoyama, Toshiyuki Sega | 2024-03-05 |
| 11894298 | Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers | Masanori Tsutsumi, Naohiro Hosoda, Shuichi Hamaguchi, Kazuki Isozumi, Yusuke Mukae +2 more | 2024-02-06 |
| 11532570 | Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same | Kenzo IIZUKA, Satoshi Shimizu, Keisuke Izumi, Tatsuya Hinoue, Yujin Terasawa +5 more | 2022-12-20 |
| 11437270 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Senaka Kanakamedala +1 more | 2022-09-06 |
| 11289416 | Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers | Masanori Tsutsumi, Naohiro Hosoda, Shuichi Hamaguchi, Kazuki Isozumi, Yusuke Mukae +2 more | 2022-03-29 |
| 10861869 | Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making same | Ryo Nakamura, Yu Ueda, Tatsuya Hinoue, Shigehisa Inoue, Masanori Tsutsumi | 2020-12-08 |
| 10608010 | Three-dimensional memory device containing replacement contact via structures and method of making the same | Yujin Terasawa, Yusuke Mukae, Yoshinobu Tanaka, Shiori Kataoka, Ryosuke Itou +2 more | 2020-03-31 |
| 10529620 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Senaka Kanakamedala +1 more | 2020-01-07 |
| 10381372 | Selective tungsten growth for word lines of a three-dimensional memory device | Fumitaka Amano, Takashi Arai, Shigehisa Inoue, Naoki Takeguchi, Takashi HAMAYA | 2019-08-13 |
| 10128261 | Cobalt-containing conductive layers for control gate electrodes in a memory structure | Raghuveer S. Makala, Rahul Sharangpani, Sateesh Koka, Naoki Takeguchi, Senaka Kanakamedala +3 more | 2018-11-13 |
| 9666594 | Multi-charge region memory cells for a vertical NAND device | Masanori Tsutsumi, Jayavel Pachamuthu | 2017-05-30 |
| 9401309 | Multiheight contact via structures for a multilevel interconnect structure | Keisuke Izumi, Naohito Yanagida, Michiaki Sano, Takehiro Yamazaki, Hiroaki Iuchi +2 more | 2016-07-26 |
| 9159739 | Floating gate ultrahigh density vertical NAND flash memory | Raghuveer S. Makala, Yanli Zhang, Yao-Sheng Lee, Senaka Kanakamedala, Rahul Sharangpani +4 more | 2015-10-13 |