Issued Patents All Time
Showing 51–75 of 113 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8541282 | Blocking layers for leakage current reduction in DRAM devices | Hanhong Chen, Wim Deweerd, Hiroyuki Ode | 2013-09-24 |
| 8541283 | High performance dielectric stack for DRAM capacitor | Hanhong Chen, Wim Deweerd, Mitsuhiro Horikawa, Kenichi Koyanagi, Hiroyuki Ode +1 more | 2013-09-24 |
| 8541828 | Methods for depositing high-K dielectrics | Imran Hashim, Edward Haywood, Xiangxin Rui, Sunil Shanker | 2013-09-24 |
| 8541868 | Top electrode templating for DRAM capacitor | Hanhong Chen, Wim Deweerd, Hiroyuki Ode | 2013-09-24 |
| 8530348 | Integration of non-noble DRAM electrode | Hanhong Chen, Wim Deweerd, Edward Haywood, Hiroyuki Ode, Gerald Richardson | 2013-09-10 |
| 8530322 | Method of forming stacked metal oxide layers | Hanhong Chen, Edward Haywood, Pragati Kumar, Xiangxin Rui | 2013-09-10 |
| 8524528 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements | Sean Barstow, Tony P. Chiang, Pragati Kumar | 2013-09-03 |
| 8501505 | Methods of combinatorial processing for screening multiple samples on a semiconductor substrate | Guarav Verma, Tony P. Chiang, Imran Hashim, Prashant B. Phatak, Kurt H. Weiner | 2013-08-06 |
| 8476141 | High performance dielectric stack for DRAM capacitor | Hanhong Chen, Wim Deweerd, Mitsuhiro Horikawa, Kenichi Koyanagi, Hiroyuki Ode +1 more | 2013-07-02 |
| 8461044 | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region | David E. Lazovsky, Thomas R. Boussie | 2013-06-11 |
| 8440537 | Adsorption site blocking method for co-doping ALD films | Hanhong Chen, Wim Deweerd, Toshiyuki Hirota, Hiroyuki Ode | 2013-05-14 |
| 8441838 | Resistive-switching nonvolatile memory elements | Pragati Kumar, Sean Barstow, Tony P. Chiang | 2013-05-14 |
| 8435854 | Top electrode templating for DRAM capacitor | Hanhong Chen, Wim Deweerd, Hiroyuki Ode | 2013-05-07 |
| 8426970 | Substrate processing including a masking layer | Zachary Fresco, Chi-I Lang, Tony P. Chiang, Thomas R. Boussie, Nitin Kumar +2 more | 2013-04-23 |
| 8415657 | Enhanced work function layer supporting growth of rutile phase titanium oxide | Xiangxin Rui, Pragati Kumar, Hanhong Chen | 2013-04-09 |
| 8415227 | High performance dielectric stack for DRAM capacitor | Wim Deweerd, Hanhong Chen, Xiangxin Rui, Hiroyuki Ode, Mitsuhiro Horikawa +1 more | 2013-04-09 |
| 8383430 | Methods of combinatorial processing for screening multiple samples on a semiconductor substrate | Guarav Verma, Tony P. Chiang, Imran Hashim, Prashant B. Phatak, Kurt H. Weiner | 2013-02-26 |
| 8367463 | Methods for forming resistive-switching metal oxides for nonvolatile memory elements | Pragati Kumar, Sean Barstow, Tony P. Chiang | 2013-02-05 |
| 8343866 | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region | David E. Lazovsky, Thomas R. Boussie | 2013-01-01 |
| 8318573 | Nonvolatile memory elements | Pragati Kumar, Sean Barstow, Tony P. Chiang, Prashant B. Phatak, Wen Wu +1 more | 2012-11-27 |
| 8294219 | Nonvolatile memory element including resistive switching metal oxide layers | Pragati Kumar, Sean Barstow, Tony P. Chiang, Prashant B. Phatak, Wen Wu +1 more | 2012-10-23 |
| 8278735 | Yttrium and titanium high-k dielectric films | Imran Hashim, Indranil De, Tony P. Chiang, Edward Haywood, Hanhong Chen +3 more | 2012-10-02 |
| 8193090 | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region | David E. Lazovsky, Thomas R. Boussie | 2012-06-05 |
| 8144498 | Resistive-switching nonvolatile memory elements | Pragati Kumar, Sean Barstow, Tony P. Chiang | 2012-03-27 |
| 8143619 | Methods of combinatorial processing for screening multiple samples on a semiconductor substrate | Gaurav Verma, Kurt H. Weiner, Prashant B. Phatak, Imran Hashim, Tony P. Chiang | 2012-03-27 |