Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9893149 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani +1 more | 2018-02-13 |
| 9876014 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2018-01-23 |
| 9871117 | Vertical transistor devices for embedded memory and logic technologies | Brian S. Doyle, Uday Shah, Charles C. Kuo | 2018-01-16 |
| 9871106 | Heterogeneous pocket for tunneling field effect transistors (TFETs) | Uygar E. Avci, Gilbert Dewey, Benjamin Chu-Kung, Ian A. Young | 2018-01-16 |
| 9818864 | Vertical nanowire transistor with axially engineered semiconductor and gate metallization | Brian S. Doyle, Uday Shah, Charles C. Kuo | 2017-11-14 |
| 9818870 | Transistor structure with variable clad/core dimension for stress and bandgap | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more | 2017-11-14 |
| 9680013 | Non-planar device having uniaxially strained semiconductor body and method of making same | Stephen M. Cea, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more | 2017-06-13 |
| 9627384 | Transistors with high concentration of boron doped germanium | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee +3 more | 2017-04-18 |
| 9583602 | Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs | Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more | 2017-02-28 |
| 9478635 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2016-10-25 |
| 9412872 | N-type and P-type tunneling field effect transistors (TFETs) | Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more | 2016-08-09 |
| 9306063 | Vertical transistor devices for embedded memory and logic technologies | Brian S. Doyle, Uday Shah, Charles C. Kuo | 2016-04-05 |
| 9293560 | Vertical nanowire transistor with axially engineered semiconductor and gate metallization | Brian S. Doyle, Uday Shah, Charles C. Kuo | 2016-03-22 |
| 9219135 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yin Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2015-12-22 |
| 9184294 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani +1 more | 2015-11-10 |
| 8901537 | Transistors with high concentration of boron doped germanium | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee +3 more | 2014-12-02 |
| 8890119 | Vertical nanowire transistor with axially engineered semiconductor and gate metallization | Brian S. Doyle, Uday Shah, Charles C. Kuo | 2014-11-18 |
| 8890120 | Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs | Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more | 2014-11-18 |
| 8847281 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani +1 more | 2014-09-30 |
| 8592803 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yin Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2013-11-26 |
| 8558279 | Non-planar device having uniaxially strained semiconductor body and method of making same | Stephen M. Cea, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more | 2013-10-15 |
| 8193523 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2012-06-05 |