Issued Patents All Time
Showing 226–250 of 304 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7893506 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy | 2011-02-22 |
| 7888221 | Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions | Jack T. Kavalieros, Gilbert Dewey, Been-Yih Jin, Justin K. Brask, Suman Datta +1 more | 2011-02-15 |
| 7883951 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Chris Barns, Uday Shah +3 more | 2011-02-08 |
| 7875937 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Suman Datta, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Robert S. Chau | 2011-01-25 |
| 7858481 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2010-12-28 |
| 7825481 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy | 2010-11-02 |
| 7785958 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Uday Shah, Suman Datta +2 more | 2010-08-31 |
| 7727830 | Fabrication of germanium nanowire transistors | Been-Yih Jin, Jack T. Kavalieros, Marko Radosavlievic, Robert S. Chau | 2010-06-01 |
| 7718479 | Forming integrated circuits with replacement metal gate electrodes | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Suman Datta, Uday Shah +1 more | 2010-05-18 |
| 7709909 | Method for making a semiconductor device having a high-k gate dielectric | Mark L. Doczy, Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask +4 more | 2010-05-04 |
| 7704858 | Methods of forming nickel silicide layers with low carbon content | Michael L. McSwiney | 2010-04-27 |
| 7704833 | Method of forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Justin K. Brask +3 more | 2010-04-27 |
| 7670894 | Selective high-k dielectric film deposition for semiconductor device | Willy Rachmady, Marko Radosavljevic, Mantu K. Hudait | 2010-03-02 |
| 7671471 | Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Chris Barns +3 more | 2010-03-02 |
| 7615441 | Forming high-k dielectric layers on smooth substrates | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Suman Datta, Uday Shah +2 more | 2009-11-10 |
| 7595248 | Angled implantation for removal of thin film layers | Michael L. Hattendorf, Justin K. Brask, Justin S. Sandford, Jack T. Kavalieros | 2009-09-29 |
| 7575991 | Removing a high-k gate dielectric | Mark L. Doczy, Robert Norman, Justin K. Brask, Jack T. Kavalieros, Suman Datta +1 more | 2009-08-18 |
| 7569443 | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate | Jack T. Kavalieros, Annalisa Cappellani, Justin K. Brask, Mark L. Doczy, Suman Datta +2 more | 2009-08-04 |
| 7524727 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Suman Datta, Justin K. Brask | 2009-04-28 |
| 7518196 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy | 2009-04-14 |
| 7485503 | Dielectric interface for group III-V semiconductor device | Justin K. Brask, Suman Datta, Mark L. Doczy, James M. Blackwell, Jack T. Kavalieros +1 more | 2009-02-03 |
| 7479421 | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby | Jack T. Kavalieros, Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta +2 more | 2009-01-20 |
| 7470972 | Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Suman Datta, Brian S. Doyle +7 more | 2008-12-30 |
| 7465976 | Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions | Jack T. Kavalieros, Gilbert Dewey, Ben Jin, Justin K. Brask, Suman Datta +1 more | 2008-12-16 |
| 7449756 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Suman Datta, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Robert S. Chau | 2008-11-11 |