MR

Marko Radosavljevic

IN Intel: 370 patents #12 of 30,777Top 1%
TR Tahoe Research: 3 patents #2 of 215Top 1%
Google: 2 patents #10,498 of 22,993Top 50%
UP University of Pennsylvania: 1 patents #1,260 of 2,719Top 50%
IBM: 1 patents #44,794 of 70,183Top 65%
📍 Portland, OR: #7 of 9,213 inventorsTop 1%
🗺 Oregon: #14 of 28,073 inventorsTop 1%
Overall (All Time): #738 of 4,157,543Top 1%
378
Patents All Time

Issued Patents All Time

Showing 301–325 of 378 patents

Patent #TitleCo-InventorsDate
9029835 Epitaxial film on nanoscale structure Benjamin Chu-King, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more 2015-05-12
9018680 Non-planar semiconductor device having active region with multi-dielectric gate stack Gilbert Dewey, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee 2015-04-28
9006707 Forming arsenide-based complementary logic on a single substrate Mantu K. Hudait, Jack T. Kavalieros, Suman Datta 2015-04-14
8987091 III-N material structure for gate-recessed transistors Han Wui Then, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more 2015-03-24
8954021 Group III-N transistors on nanoscale template structures Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more 2015-02-10
8936976 Conductivity improvements for III-V semiconductor devices Prashant Majhi, Jack T. Kavalieros, Niti Goel, Wilman Tsai, Niloy Mukherjee +3 more 2015-01-20
8896101 Nonplanar III-N transistors with compositionally graded semiconductor channels Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more 2014-11-25
8890264 Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface Gilbert Dewey, Robert S. Chau, Han Wui Then, Scott B. Clendenning, Ravi Pillarisetty 2014-11-18
8890118 Tunnel field effect transistor Benjamin Chu-Kung, Gilbert Dewey, Niloy Mukherjee 2014-11-18
8883573 Isolation for nanowire devices Uday Shah, Benjamin Chu-Kung, Been-Yih Jin, Ravi Pillarisetty, Willy Rachmady 2014-11-11
8872225 Defect transferred and lattice mismatched epitaxial film Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more 2014-10-28
8872160 Increasing carrier injection velocity for integrated circuit devices Benjamin Chu-Kung, Gilbert Dewey, Niloy Mukherjee 2014-10-28
8853067 Method of isolating nanowires from a substrate Benjamin Chu-Kung, Uday Shah, Ravi Pillarisetty, Been-Yin Jin, Willy Rachmady 2014-10-07
8846480 Carrier mobility in surface-channel transistors, apparatus made therewith, and system containing same Ravi Pillarisetty, Mantu K. Hudait, Gilbert Dewey, Jack T. Kavalieros 2014-09-30
8823059 Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack Gilbert Dewey, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee 2014-09-02
8809836 Techniques for forming contacts to quantum well transistors Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Jack T. Kavalieros, Willy Rachmady +2 more 2014-08-19
8785909 Non-planar semiconductor device having channel region with low band-gap cladding layer Gilbert Dewey, Benjamin Chu-Kung, Dipanjan Basu, Sanaz K. Gardner, Satyarth Suri +4 more 2014-07-22
8785907 Epitaxial film growth on patterned substrate Niti Goel, Niloy Mukherjee, Seung Hoon Sung, Van H. Le, Matthew V. Metz +11 more 2014-07-22
8765563 Trench confined epitaxially grown device layer(s) Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more 2014-07-01
8768271 Group III-N transistors on nanoscale template structures Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more 2014-07-01
8748269 Quantum-well-based semiconductor devices Gilbert Dewey, Ravi Pillarisetty, Robert S. Chau, Matthew V. Metz 2014-06-10
8716751 Methods of containing defects for non-silicon device engineering Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more 2014-05-06
8710490 Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer Ravi Pillarisetty, Niti Goel, Han Wui Then, Van H. Le, Willy Rachmady +2 more 2014-04-29
8633471 Apparatus and methods for forming a modulation doped non-planar transistor Ravi Pillarisetty, Mantu K. Hudait, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros 2014-01-21
8633470 Techniques and configurations to impart strain to integrated circuit devices Gilbert Dewey, Niloy Mukherjee, Ravi Pillarisetty 2014-01-21