Issued Patents All Time
Showing 251–275 of 378 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9685381 | Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon | Niti Goel, Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey +4 more | 2017-06-20 |
| 9673045 | Integration of III-V devices on Si wafers | Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Benjamin Chu-Kung +1 more | 2017-06-06 |
| 9666708 | III-N transistors with enhanced breakdown voltage | Han Wui Then, Benjamin Chu-Kung, Sansaptak Dasgupta, Robert S. Chau, Seung Hoon Sung +1 more | 2017-05-30 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2017-05-30 |
| 9666492 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros, Willy Rachmady +4 more | 2017-05-30 |
| 9660085 | Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof | Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2017-05-23 |
| 9660067 | III-N transistors with epitaxial layers providing steep subthreshold swing | Han Wui Then, Sansaptak Dasgupta, Robert S. Chau | 2017-05-23 |
| 9660064 | Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2017-05-23 |
| 9653559 | Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same | Niloy Mukherjee, Gilbert Dewey, Niti Goel, Sanaz Kabehie, Matthew V. Metz +1 more | 2017-05-16 |
| 9653548 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Gilbert Dewey, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee | 2017-05-16 |
| 9640622 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Benjamin Chu-Kung +2 more | 2017-05-02 |
| 9640671 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2017-05-02 |
| 9640646 | Semiconductor device having group III-V material active region and graded gate dielectric | Gilbert Dewey, Ravi Pillarisetty, Matthew V. Metz | 2017-05-02 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more | 2017-05-02 |
| 9640422 | III-N devices in Si trenches | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +3 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2017-04-25 |
| 9590069 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Han Wui Then, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more | 2017-03-07 |
| 9583574 | Epitaxial buffer layers for group III-N transistors on silicon substrates | Sansaptak Dasgupta, Han Wui Then, Niloy Mukherjee, Robert S. Chau | 2017-02-28 |
| 9570614 | Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Gilbert Dewey +8 more | 2017-02-14 |
| 9564490 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros | 2017-02-07 |
| 9530878 | III-N material structure for gate-recessed transistors | Han Wui Then, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more | 2016-12-27 |
| 9478635 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2016-10-25 |
| 9461141 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more | 2016-10-04 |
| 9461160 | Non-planar III-N transistor | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2016-10-04 |
| 9443936 | Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Gilbert Dewey +2 more | 2016-09-13 |