Issued Patents All Time
Showing 26–50 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10741544 | Integration of electrostatic discharge protection into vertical fin technology | Brent A. Anderson, Huiming Bu, Terence B. Hook, Junli Wang | 2020-08-11 |
| 10727273 | Magnetoresistive random access memory thin film transistor unit cell | Praveen Joseph, Gauri Karve, Eric Raymond Evarts | 2020-07-28 |
| 10699959 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Heng Wu, Peng Xu | 2020-06-30 |
| 10692772 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Heng Wu, Peng Xu | 2020-06-23 |
| 10615276 | Integration of input/output device in vertical field-effect transistor technology | Junli Wang, Brent A. Anderson, Terence B. Hook, Gauri Karve | 2020-04-07 |
| 10558123 | Electron source | Yung-Ho Alex Chuang, Yinying Xiao-Li, John Fielden | 2020-02-11 |
| 10504889 | Integrating a junction field effect transistor into a vertical field effect transistor | Brent A. Anderson, Huiming Bu, Terence B. Hook, Junli Wang | 2019-12-10 |
| 10431646 | Electronic devices having spiral conductive structures | Peng Xu, Kangguo Cheng, Chi-Chun Liu, Yongan Xu | 2019-10-01 |
| 10396179 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Peng Xu, Yongan Xu | 2019-08-27 |
| 10388572 | Integrating metal-insulator-metal capacitors with fabrication of vertical field effect transistors | Kangguo Cheng, Heng Wu, Peng Xu | 2019-08-20 |
| 10361285 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Peng Xu, Yongan Xu | 2019-07-23 |
| 10325004 | Method of optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology | Thaddeus Gerard Dziura, Yung-Ho Alex Chuang, Bin-Ming Benjamin Tsai, John J. Hench | 2019-06-18 |
| 10319852 | Forming eDRAM unit cell with VFET and via capacitance | Brent A. Anderson, Huiming Bu, Junli Wang | 2019-06-11 |
| 10276558 | Electrostatic discharge protection using vertical fin CMOS technology | Brent A. Anderson, Huiming Bu, Terence B. Hook, Junli Wang, Miaomiao Wang | 2019-04-30 |
| 10197501 | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors | Yung-Ho Alex Chuang, John Fielden, David L. Brown | 2019-02-05 |
| 10133181 | Electron source | Yung-Ho Alex Chuang, Yinying Xiao-Li, John Fielden | 2018-11-20 |
| 10043744 | Avoiding gate metal via shorting to source or drain contacts | Victor Chan, Yann Mignot, Yongan Xu | 2018-08-07 |
| 10041048 | Immortalization of epithelial cells and methods of use | Richard Schlegel | 2018-08-07 |
| 9991365 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Kangguo Cheng, Peng Xu, Yongan Xu | 2018-06-05 |
| 9991267 | Forming eDRAM unit cell with VFET and via capacitance | Brent A. Anderson, Huiming Bu, Junli Wang | 2018-06-05 |
| 9970863 | Optical metrology with reduced focus error sensitivity | Shankar Krishnan, Guorong V. Zhuang, David Y. Wang | 2018-05-15 |
| 9966230 | Multi-column electron beam lithography including field emitters on a silicon substrate with boron layer | Yung-Ho Alex Chuang, Yinying Xiao-Li, John Fielden | 2018-05-08 |
| 9951315 | Immortalization of epithelial cells and methods of use | Richard Schlegel | 2018-04-24 |
| 9837351 | Avoiding gate metal via shorting to source or drain contacts | Victor Chan, Yann Mignot, Yongan Xu | 2017-12-05 |
| 9786656 | Integration of bipolar transistor into complimentary metal-oxide-semiconductor process | Brent A. Anderson, Junli Wang | 2017-10-10 |