Issued Patents All Time
Showing 301–323 of 323 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9666693 | Structure and method to minimize junction capacitance in NANO sheets | Bruce B. Doris, Terence B. Hook | 2017-05-30 |
| 9659960 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2017-05-23 |
| 9653547 | Integrated etch stop for capped gate and method for manufacturing the same | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2017-05-16 |
| 9653602 | Tensile and compressive fins for vertical field effect transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-05-16 |
| 9653359 | Bulk fin STI formation | Kangguo Cheng, Juntao Li | 2017-05-16 |
| 9653458 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-05-16 |
| 9647086 | Early PTS with buffer for channel doping control | Steven Bentley, Jody A. Fronheiser, Joseph S. Washington, Pierre Morin | 2017-05-09 |
| 9647139 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2017-05-09 |
| 9640436 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2017-05-02 |
| 9607899 | Integration of vertical transistors with 3D long channel transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-03-28 |
| 9595605 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-03-14 |
| 9577038 | Structure and method to minimize junction capacitance in nano sheets | Bruce B. Doris, Terence B. Hook | 2017-02-21 |
| 9515138 | Structure and method to minimize junction capacitance in nano sheets | Bruce B. Doris, Terence B. Hook | 2016-12-06 |
| 9508829 | Nanosheet MOSFET with full-height air-gap spacer | Kangguo Cheng, Bruce B. Doris, Michael A. Guillorn | 2016-11-29 |
| 9484306 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2016-11-01 |
| 9466570 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2016-10-11 |
| 9443977 | FinFET with reduced source and drain resistance | Kangguo Cheng, Juntao Li, Junli Wang | 2016-09-13 |
| 9437501 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2016-09-06 |
| 9397215 | FinFET with reduced source and drain resistance | Kangguo Cheng, Juntao Li, Junli Wang | 2016-07-19 |
| 9362355 | Nanosheet MOSFET with full-height air-gap spacer | Kangguo Cheng, Bruce B. Doris, Michael A. Guillorn | 2016-06-07 |
| 7505257 | Body structure for notebook type computer | Tien-Chang Lin | 2009-03-17 |
| 7324092 | Electronic device hinge structure | Tien-Chang Lin | 2008-01-29 |
| 6633555 | System and method for monitoring signaling units on A-interface links in a GSM network | Lisan Lin, Xingchen Lu, Vijayakumar Venkataraman | 2003-10-14 |