Issued Patents All Time
Showing 26–50 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527574 | Stacked resistive memory with individual switch control | Takashi Ando, Jingyun Zhang, Alexander Reznicek, Choonghyun Lee | 2022-12-13 |
| 11515217 | Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate | Takashi Ando, Choonghyun Lee, Jingyun Zhang | 2022-11-29 |
| 11515430 | Tilted nanowire transistor | Kangguo Cheng, Alexander Reznicek, Karthik Balakrishnan | 2022-11-29 |
| 11515214 | Threshold voltage adjustment by inner spacer material selection | Takashi Ando, Jingyun Zhang, Choonghyun Lee | 2022-11-29 |
| 11495669 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2022-11-08 |
| 11495668 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2022-11-08 |
| 11444185 | III-V lateral bipolar junction transistor on local facetted buried oxide layer | Mahmoud Khojasteh, Tak H. Ning, Alexander Reznicek | 2022-09-13 |
| 11444165 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Alexander Reznicek, Jingyun Zhang, Choonghyun Lee | 2022-09-13 |
| 11437502 | III-V lateral bipolar junction transistor on local facetted buried oxide layer | Mahmoud Khojasteh, Tak H. Ning, Alexander Reznicek | 2022-09-06 |
| 11430660 | Confined work function material for gate-all around transistor devices | Jingyun Zhang, Choonghyun Lee, Takashi Ando, Alexander Reznicek | 2022-08-30 |
| 11404634 | Structured bottom electrode for MTJ containing devices | Nathan P. Marchack, Bruce B. Doris | 2022-08-02 |
| 11362086 | Diode connected vertical transistor | Karthik Balakrishnan, Alexander Reznicek | 2022-06-14 |
| 11316104 | Inverted wide base double magnetic tunnel junction device | Bruce B. Doris, Janusz J. Nowak, Jonathan Zanhong Sun | 2022-04-26 |
| 11302794 | FinFET with dual work function metal | Ruilong Xie, Takashi Ando, Alexander Reznicek | 2022-04-12 |
| 11289644 | Magnetic tunnel junction having all-around structure | Kotb Jabeur, Daniel C. Worledge, Jonathan Zanhong Sun | 2022-03-29 |
| 11239359 | Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer | Jingyun Zhang, Choonghyun Lee, Takashi Ando, Alexander Reznicek | 2022-02-01 |
| 11226252 | Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors | Virat Vasav Mehta, Alexander Reznicek, Chandrasekharan Kothandaraman, Eric Raymond Evarts | 2022-01-18 |
| 11217450 | Device with pure silicon oxide layer on silicon-germanium layer | Takashi Ando, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan | 2022-01-04 |
| 11205698 | Multiple work function nanosheet transistors with inner spacer modulation | Takashi Ando, Ruilong Xie, Alexander Reznicek | 2021-12-21 |
| 11195764 | Vertical transport field-effect transistors having germanium channel surfaces | Choonghyun Lee, Takashi Ando | 2021-12-07 |
| 11187672 | Superhydrophobic electrode and biosensing device using the same | Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2021-11-30 |
| 11189661 | FinFET 2T2R RRAM | Alexander Reznicek, Takashi Ando, Choonghyun Lee, Jingyun Zhang | 2021-11-30 |
| 11189712 | Formation of vertical transport field-effect transistor structure having increased effective width | Ruilong Xie, Alexander Reznicek, Takashi Ando | 2021-11-30 |
| 11189782 | Multilayered bottom electrode for MTJ-containing devices | Bruce B. Doris, Thitima Suwannasiri, Nathan P. Marchack | 2021-11-30 |
| 11183632 | Self-aligned edge passivation for robust resistive random access memory connection | Takashi Ando, Ruilong Xie, Alexander Reznicek | 2021-11-23 |