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Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness |
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Bipolar transistor with extrinsic base region and methods of fabrication |
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2016-04-12 |
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Method of forming borderless contacts using a removable mandrel |
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1995-11-14 |
| 5298790 |
Reactive ion etching buffer mask |
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1994-03-29 |
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Forming wide dielectric-filled isolation trenches in semi-conductors |
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1992-12-22 |
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Reactive ion etching buffer mask |
David L. Harmon, Nancy T. Pascoe, John F. Rembetski |
1992-06-02 |
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Fluorine-containing base layer for multi-layer resist processes |
James A. Bruce, Ranee W. Kwong, Tanya N. Lee, Harold G. Linde, Harbans S. Sachdev |
1990-12-18 |
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Process for defining organic sidewall structures |
William J. Cote, Donald M. Kenney, Michael A. Leach, Jeffrey A. Robinson, Robert W. Sweetser |
1989-06-13 |
| 4799990 |
Method of self-aligning a trench isolation structure to an implanted well region |
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1989-01-24 |
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Formation of variable-width sidewall structures |
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1988-10-11 |