Issued Patents All Time
Showing 501–525 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9653359 | Bulk fin STI formation | Kangguo Cheng, Xin Miao | 2017-05-16 |
| 9647120 | Vertical FET symmetric and asymmetric source/drain formation | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2017-05-09 |
| 9647092 | Method and structure of forming FinFET electrical fuse structure | Hong He, Chih-Chao Yang, Yunpeng Yin | 2017-05-09 |
| 9627511 | Vertical transistor having uniform bottom spacers | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-04-18 |
| 9614087 | Strained vertical field-effect transistor (FET) and method of forming the same | Kangguo Cheng, Peng Xu | 2017-04-04 |
| 9614057 | Enriched, high mobility strained fin having bottom dielectric isolation | Bruce B. Doris, Hong He, Junli Wang, Chih-Chao Yang | 2017-04-04 |
| 9614077 | Vertical finfet with strained channel | Kangguo Cheng, Ramachandra Divakaruni | 2017-04-04 |
| 9608067 | Hybrid aspect ratio trapping | Kangguo Cheng, Ramachandra Divakaruni, Hong He | 2017-03-28 |
| 9601514 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng | 2017-03-21 |
| 9601386 | Fin isolation on a bulk wafer | Hong He, Junli Wang, Chih-Chao Yang | 2017-03-21 |
| 9595473 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Chih-Chao Yang, Yunpeng Yin | 2017-03-14 |
| 9583626 | Silicon germanium alloy fins with reduced defects | Kangguo Cheng, Hong He | 2017-02-28 |
| 9576979 | Preventing strained fin relaxation by sealing fin ends | Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve +3 more | 2017-02-21 |
| 9570299 | Formation of SiGe nanotubes | Kangguo Cheng, Hong He, Ali Khakifirooz | 2017-02-14 |
| 9559120 | Porous silicon relaxation medium for dislocation free CMOS devices | Kangguo Cheng, Ramachandra Divakaruni, Jeehwan Kim, Devendra K. Sadana | 2017-01-31 |
| 9557290 | Nanochannel electrode devices | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2017-01-31 |
| 9558999 | Ultra-thin metal wires formed through selective deposition | Chih-Chao Yang, Yunpeng Yin | 2017-01-31 |
| 9543440 | High density vertical nanowire stack for field effect transistor | Kangguo Cheng, Ali Khakifirooz | 2017-01-10 |
| 9536986 | Enriched, high mobility strained fin having bottom dielectric isolation | Bruce B. Doris, Hong He, Junli Wang, Chih-Chao Yang | 2017-01-03 |
| 9530701 | Method of forming semiconductor fins on SOI substrate | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2016-12-27 |
| 9520357 | Anti-fuse structure and method for manufacturing the same | Hong He, Junli Wang, Chih-Chao Yang | 2016-12-13 |
| 9490223 | Structure to prevent deep trench moat charging and moat isolation fails | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2016-11-08 |
| 9484201 | Epitaxial silicon germanium fin formation using sacrificial silicon fin templates | Hong He, Junli Wang, Chih-Chao Yang | 2016-11-01 |
| 9484267 | Stacked nanowire devices | Kangguo Cheng, Ramachandra Divakaruni | 2016-11-01 |
| 9461042 | Sublithographic width finFET employing solid phase epitaxy | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2016-10-04 |