Issued Patents All Time
Showing 451–475 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9881998 | Stacked nanosheet field effect transistor device with substrate isolation | Kangguo Cheng, Geng Wang, Qintao Zhang | 2018-01-30 |
| 9881869 | Middle of the line integrated efuse in trench EPI structure | Hong He, Junli Wang, Chih-Chao Yang | 2018-01-30 |
| 9875516 | Systems and methods for graphics process units power management | Steven Gao | 2018-01-23 |
| 9870989 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2018-01-16 |
| 9865598 | FinFET with uniform shallow trench isolation recess | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-01-09 |
| 9859174 | Sidewall image transfer structures | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2018-01-02 |
| 9859388 | Uniform vertical field effect transistor spacers | Kangguo Cheng | 2018-01-02 |
| 9859373 | Asymmetric FET | Kangguo Cheng, Joseph Ervin, Chengwen Pei, Geng Wang | 2018-01-02 |
| 9853054 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Zuoguang Liu, Xin Miao | 2017-12-26 |
| 9853056 | Strained CMOS on strain relaxation buffer substrate | Kangguo Cheng, Balasubramanian Pranatharthiharan | 2017-12-26 |
| 9852982 | Anti-fuses with reduced programming voltages | Chengwen Pei, Kangguo Cheng, Geng Wang | 2017-12-26 |
| 9847246 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-12-19 |
| 9847261 | Metal reflow for middle of line contacts | Junli Wang, Chih-Chao Yang | 2017-12-19 |
| 9842835 | High density nanosheet diodes | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-12-12 |
| 9837403 | Asymmetrical vertical transistor | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2017-12-05 |
| 9837405 | Fabrication of a vertical fin field effect transistor having a consistent channel width | Kangguo Cheng | 2017-12-05 |
| 9837535 | Directional deposition of protection layer | Hong He, Junli Wang, Chih-Chao Yang | 2017-12-05 |
| 9818875 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2017-11-14 |
| 9812394 | Faceted structure formed by self-limiting etch | Kangguo Cheng, Ali Khakifirooz, Werner Rausch | 2017-11-07 |
| 9806084 | Anti-fuse with reduced programming voltage | Kangguo Cheng, Chengwen Pei, Geng Wang | 2017-10-31 |
| 9799647 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-10-24 |
| 9799749 | Vertical transport FET devices with uniform bottom spacer | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2017-10-24 |
| 9793270 | Forming gates with varying length using sidewall image transfer | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-10-17 |
| 9768118 | Contact having self-aligned air gap spacers | Junli Wang, Chih-Chao Yang | 2017-09-19 |
| 9768166 | Integrated LDMOS and VFET transistors | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-09-19 |