Issued Patents All Time
Showing 226–250 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10741677 | Stacked silicon nanotubes | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2020-08-11 |
| 10741456 | Vertically stacked nanosheet CMOS transistor | Kangguo Cheng, Zhenxing Bi | 2020-08-11 |
| 10727323 | Three-dimensional (3D) tunneling field-effect transistor (FET) | Kangguo Cheng, Peng Xu, Heng Wu | 2020-07-28 |
| 10727345 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Xin Miao | 2020-07-28 |
| 10727352 | Long-channel fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2020-07-28 |
| 10727315 | Nanosheet transistor | Kangguo Cheng, Heng Wu, Peng Xu | 2020-07-28 |
| 10720364 | Forming vertical transistor devices with greater layout flexibility and packing density | Kangguo Cheng, Choonghyun Lee | 2020-07-21 |
| 10720527 | Transistor having an oxide-isolated strained channel fin on a bulk substrate | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2020-07-21 |
| 10714596 | Directional deposition of protection layer | Hong He, Junli Wang, Chih-Chao Yang | 2020-07-14 |
| 10714569 | Producing strained nanosheet field effect transistors using a phase change material | Dexin Kong, Kangguo Cheng, Zhenxing Bi | 2020-07-14 |
| 10707208 | Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths | Kangguo Cheng, Peng Xu | 2020-07-07 |
| 10707127 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Kangguo Cheng, Zhenxing Bi, Dexin Kong | 2020-07-07 |
| 10707329 | Vertical fin field effect transistor device with reduced gate variation and reduced capacitance | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2020-07-07 |
| 10700062 | Vertical transport field-effect transistors with uniform threshold voltage | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2020-06-30 |
| 10689245 | Vertically stacked nanofluidic channel array | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2020-06-23 |
| 10686057 | Vertical transport FET devices having a sacrificial doped layer | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2020-06-16 |
| 10686014 | Semiconductor memory device having a vertical active region | Kangguo Cheng, Takashi Ando, Dexin Kong | 2020-06-16 |
| 10685886 | Fabrication of logic devices and power devices on the same substrate | Kangguo Cheng, Liying Jiang, John G. Gaudiello | 2020-06-16 |
| 10680102 | Reduction of top source/drain external resistance and parasitic capacitance in vertical transistors | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2020-06-09 |
| 10680063 | Method of manufacturing stacked SiGe nanotubes | Kangguo Cheng, Choonghyun Lee | 2020-06-09 |
| 10680000 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Geng Wang, Qintao Zhang | 2020-06-09 |
| 10679998 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Geng Wang, Qintao Zhang | 2020-06-09 |
| 10679939 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2020-06-09 |
| 10669579 | DNA sequencing with stacked nanopores | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2020-06-02 |
| 10665714 | Vertical transistors with various gate lengths | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2020-05-26 |