Issued Patents All Time
Showing 376–400 of 437 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570571 | Gate stack integrated metal resistors | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-02-14 |
| 9564437 | Method and structure for forming FinFET CMOS with dual doped STI regions | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-02-07 |
| 9559014 | Self-aligned punch through stopper liner for bulk FinFET | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-01-31 |
| 9553088 | Forming semiconductor device with close ground rules | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-01-24 |
| 9548388 | Forming field effect transistor device spacers | Rama Kambhampati, Ruilong Xie, Tenko Yamashita | 2017-01-17 |
| 9536986 | Enriched, high mobility strained fin having bottom dielectric isolation | Bruce B. Doris, Hong He, Juntao Li, Chih-Chao Yang | 2017-01-03 |
| 9536988 | Parasitic capacitance reduction | Balasubramanian Pranatharthiharan | 2017-01-03 |
| 9530890 | Parasitic capacitance reduction | Balasubramanian Pranatharthiharan | 2016-12-27 |
| 9530651 | Replacement metal gate finFET | Hemanth Jagannathan, Sanjay C. Mehta, Chun-Chen Yeh, Stefan Schmitz | 2016-12-27 |
| 9530659 | Structure for preventing buried oxide gouging during planar and FinFET Processing on SOI | Kern Rim | 2016-12-27 |
| 9530698 | Method and structure for forming FinFET CMOS with dual doped STI regions | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2016-12-27 |
| 9520357 | Anti-fuse structure and method for manufacturing the same | Hong He, Juntao Li, Chih-Chao Yang | 2016-12-13 |
| 9520392 | Semiconductor device including finFET and fin varactor | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2016-12-13 |
| 9515070 | Replacement metal gate | David V. Horak, Effendi Leobandung, Stefan Schmitz | 2016-12-06 |
| 9508818 | Method and structure for forming gate contact above active area with trench silicide | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2016-11-29 |
| 9508741 | CMOS structure on SSOI wafer | Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-11-29 |
| 9508825 | Method and structure for forming gate contact above active area with trench silicide | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2016-11-29 |
| 9496281 | Dual isolation on SSOI wafer | Bruce B. Doris, Hong He, Ali Khakifirooz | 2016-11-15 |
| 9490253 | Gate planarity for finFET using dummy polish stop | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2016-11-08 |
| 9490335 | Extra gate device for nanosheet | Bruce B. Doris, Terence B. Hook | 2016-11-08 |
| 9490252 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2016-11-08 |
| 9484201 | Epitaxial silicon germanium fin formation using sacrificial silicon fin templates | Hong He, Juntao Li, Chih-Chao Yang | 2016-11-01 |
| 9484264 | Field effect transistor contacts | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2016-11-01 |
| 9472407 | Replacement metal gate FinFET | Hemanth Jagannathan, Sanjay C. Mehta, Chun-Chen Yeh, Stefan Schmitz | 2016-10-18 |
| 9472670 | Field effect transistor device spacers | Rama Kambhampati, Ruilong Xie, Tenko Yamashita | 2016-10-18 |