EJ

Eric A. Joseph

IBM: 85 patents #762 of 70,183Top 2%
ZE Zeon: 7 patents #98 of 734Top 15%
MC Macronix International Co.: 7 patents #247 of 1,241Top 20%
Applied Materials: 4 patents #2,506 of 7,310Top 35%
Globalfoundries: 3 patents #1,029 of 4,424Top 25%
TI Texas Instruments: 2 patents #5,248 of 12,488Top 45%
QA Qimonda Ag: 2 patents #252 of 575Top 45%
TL Tokyo Electron Limited: 1 patents #3,538 of 5,567Top 65%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
📍 White Plains, NY: #14 of 917 inventorsTop 2%
🗺 New York: #629 of 115,490 inventorsTop 1%
Overall (All Time): #16,435 of 4,157,543Top 1%
94
Patents All Time

Issued Patents All Time

Showing 51–75 of 94 patents

Patent #TitleCo-InventorsDate
8796041 Pillar-based interconnects for magnetoresistive random access memory Solomon Assefa, Michael C. Gaidis, Eugene J. O'Sullivan 2014-08-05
8772906 Thermally insulated phase change material cells Matthew J. BrightSky, Roger W. Cheek, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more 2014-07-08
8728859 Small footprint phase change memory cell Matthew J. Breitwisch, Chung H. Lam, Hsiang-Lan Lung 2014-05-20
8686391 Pore phase change material cell fabricated from recessed pillar Alejandro G. Schrott, Chung H. Lam, Matthew J. Breitwisch, Roger W. Cheek 2014-04-01
8652969 High aspect ratio and reduced undercut trench etch process for a semiconductor substrate Nicholas C. M. Fuller, Edmund M. Sikorski, Goh Matsuura 2014-02-18
8633464 In via formed phase change memory cell with recessed pillar heater Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Alejandro G. Schrott 2014-01-21
8633117 Sputter and surface modification etch processing for metal patterning in integrated circuits Cyril Cabral, Jr., Benjamin L. Fletcher, Nicholas C. M. Fuller, Hiroyuki Miyazoe 2014-01-21
8536675 Thermally insulated phase change material memory cells Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more 2013-09-17
8518718 Magnetic spin shift register memory Stuart Stephen Papworth Parkin, Mary B. Rothwell 2013-08-27
8471236 Flat lower bottom electrode for phase change memory cell Matthew J. Breitwisch, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott 2013-06-25
8470628 Methods to fabricate silicide micromechanical device Michael A. Guillorn, Fei Liu, Zhen Zhang 2013-06-25
8467221 Magnetic spin shift register memory Stuart Stephen Papworth Parkin, Mary B. Rothwell 2013-06-18
8466006 Thermally insulated phase material cells Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more 2013-06-18
8445313 Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Chung H. Lam, Michael F. Lofaro +3 more 2013-05-21
8431486 Interconnect structure for improved time dependent dielectric breakdown Cyril Cabral, Jr., Sebastian U. Engelmann, Benjamin L. Fletcher, Satyanarayana V. Nitta 2013-04-30
8426967 Scaled-down phase change memory cell in recessed heater Chung H. Lam, Alejandro G. Schrott 2013-04-23
8344351 Phase change memory device with plated phase change material Matthew J. Breitwisch, Alejandro G. Schrott, Xiaoyan Shao 2013-01-01
8338225 Method to reduce a via area in a phase change memory cell Matthew J. Breitwisch, Chung H. Lam, Alejandro G. Schrott, Yu Zhu 2012-12-25
8330137 Pore phase change material cell fabricated from recessed pillar Alejandro G. Schrott, Chung H. Lam, Matthew J. Breitwisch, Roger W. Cheek 2012-12-11
8288236 Field effect transistor having nanostructure channel Josephine B. Chang, Michael A. Guillorn 2012-10-16
8283650 Flat lower bottom electrode for phase change memory cell Matthew J. Breitwisch, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott 2012-10-09
8273598 Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Chung H. Lam, Michael F. Lofaro +3 more 2012-09-25
8232171 Structure with isotropic silicon recess profile in nanoscale dimensions Sebastian U. Engelmann, Nicholas C. M. Fuller, Isaac Lauer, Ryan M. Martin, James Vichiconti +1 more 2012-07-31
8189372 Integrated circuit including electrode having recessed portion Matthew J. Breitwisch, Shihhung Chen, Thomas Happ 2012-05-29
8138056 Thermally insulated phase change material memory cells with pillar structure Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Bipin Rajendran, Alejandro G. Schrott +1 more 2012-03-20