Issued Patents All Time
Showing 76–94 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8138028 | Method for manufacturing a phase change memory device with pillar bottom electrode | Hsiang-Lan Lung, Chieh-Fang Chen, Yi-Chou Chen, Shih-Hung Chen, Chung H. Lam +5 more | 2012-03-20 |
| 8119528 | Nanoscale electrodes for phase change memory devices | Alejandro G. Schrott, Mary B. Rothwell, Matthew J. Breitwisch, Chung H. Lam, Bipin Rajendran +1 more | 2012-02-21 |
| 8115186 | Phase change memory cell with reduced switchable volume | Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott | 2012-02-14 |
| 8105859 | In via formed phase change memory cell with recessed pillar heater | Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Alejandro G. Schrott | 2012-01-31 |
| 8101456 | Method to reduce a via area in a phase change memory cell | Matthew J. Breitwisch, Chung H. Lam, Alejandro G. Schrott, Yu Zhu | 2012-01-24 |
| 8030130 | Phase change memory device with plated phase change material | Matthew J. Breitwisch, Alejandro G. Schrott, Xiaoyan Shao | 2011-10-04 |
| 7981755 | Self aligned ring electrodes | Matthew J. Breitwisch, Chung H. Lam, Alejandro G. Schrott, Brandon Yee | 2011-07-19 |
| 7972966 | Etching of tungsten selective to titanium nitride | Matthew J. Breitwisch, Chung H. Lam, Alejandro G. Schrott, Brandon Yee | 2011-07-05 |
| 7960203 | Pore phase change material cell fabricated from recessed pillar | Alejandro G. Schrott, Chung H. Lam, Matthew J. Breitwisch, Roger W. Cheek | 2011-06-14 |
| 7910911 | Phase change memory with tapered heater | Matthew J. Breitwisch, Thomas Happ, Hsiang-Lan Lung, Jan Boris Philipp | 2011-03-22 |
| 7906368 | Phase change memory with tapered heater | Matthew J. Breitwisch, Thomas Happ, Hsiang-Lan Lung, Jan Boris Philipp | 2011-03-15 |
| 7851323 | Phase change material with filament electrode | Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Alejandro G. Schrott, Gerhard Ingmar Meijer | 2010-12-14 |
| 7834339 | Programmable-resistance memory cell | Johannes G. Bednorz, Siegfried F. Karg, Chung H. Lam, Gerhard Ingmar Meijer, Alejandro G. Schrott | 2010-11-16 |
| 7755921 | Method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devices | Solomon Assefa, Michael C. Gaidis, Stuart Stephen Papworth Parkin, Christy S. Tyberg | 2010-07-13 |
| 7709325 | Method of forming ring electrode | Chung H. Lam, Alejandro G. Schrott | 2010-05-04 |
| 7560721 | Phase change material with filament electrode | Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Alejandro G. Schrott, Gerhard Ingmar Meijer | 2009-07-14 |
| 7485487 | Phase change memory cell with electrode | Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Alejandro G. Schrott | 2009-02-03 |
| 6803661 | Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography | Gautam Thakar, Reima Laaksonen, Cameron Gross | 2004-10-12 |
| 6624068 | Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography | Gautam Thakar, Reima Laaksonen, Cameron Gross | 2003-09-23 |