EN

Edward J. Nowak

IBM: 447 patents #32 of 70,183Top 1%
Globalfoundries: 49 patents #44 of 4,424Top 1%
Samsung: 4 patents #25,854 of 75,807Top 35%
TC Toshiba America Electronic Components: 1 patents #23 of 77Top 30%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
📍 Burlington, VT: #2 of 475 inventorsTop 1%
🗺 Vermont: #3 of 4,968 inventorsTop 1%
Overall (All Time): #383 of 4,157,543Top 1%
501
Patents All Time

Issued Patents All Time

Showing 226–250 of 501 patents

Patent #TitleCo-InventorsDate
8053348 Method of forming a semiconductor device using a sacrificial uniform vertical thickness spacer structure Brent A. Anderson 2011-11-08
8053314 Asymmetric field effect transistor structure and method Brent A. Anderson, Andres Bryant, William F. Clark, Jr. 2011-11-08
8039929 Asymmetrically stressed CMOS FinFET Brent A. Anderson 2011-10-18
8039376 Methods of changing threshold voltages of semiconductor transistors by ion implantation William F. Clark, Jr. 2011-10-18
8039908 Damascene gate having protected shorting regions Brent A. Anderson, Jed H. Rankin 2011-10-18
8036022 Structure and method of using asymmetric junction engineered SRAM pass gates, and design structure Brent A. Anderson 2011-10-11
8022478 Method of forming a multi-fin multi-gate field effect transistor with tailored drive current Brent A. Anderson 2011-09-20
8017934 Carbon nanotube based integrated semiconductor circuit Joerg Appenzeller, AJ KleinOsowski, Richard Q. Williams 2011-09-13
8003516 BEOL interconnect structures and related fabrication methods Brent A. Anderson, Jed H. Rankin 2011-08-23
8003463 Structure, design structure and method of manufacturing dual metal gate Vt roll-up structure Brent A. Anderson 2011-08-23
7994612 FinFETs single-sided implant formation Brent A. Anderson, Andres Bryant, Josephine B. Chang, Omer H. Dokumaci 2011-08-09
7993989 Vertical spacer forming and related transistor Brent A. Anderson 2011-08-09
7984394 Design structure for a redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same Brent A. Anderson, Jeanne P. Bickford, Markus Buehler, Jason D. Hibbeler, Juergen Koehl 2011-07-19
7982269 Transistors having asymmetric strained source/drain portions Brent A. Anderson, Andres Bryant 2011-07-19
7981772 Methods of fabricating nanostructures Brent A. Anderson, Andres Bryant, Jeffrey W. Sleight 2011-07-19
7979836 Split-gate DRAM with MuGFET, design structure, and method of manufacture Brent A. Anderson 2011-07-12
7971158 Spacer fill structure, method and design structure for reducing device variation Brent A. Anderson, Andres Bryant, Jed H. Rankin 2011-06-28
7964922 Structure, design structure and method of manufacturing dual metal gate VT roll-up structure Brent A. Anderson 2011-06-21
7964467 Method, structure and design structure for customizing history effects of soi circuits Brent A. Anderson 2011-06-21
7964465 Transistors having asymmetric strained source/drain portions Brent A. Anderson, Andres Bryant 2011-06-21
7960836 Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same Brent A. Anderson, Jeanne P. Bickford, Markus Buehler, Jason D. Hibbeler, Juergen Koehl 2011-06-14
7960791 Dense pitch bulk FinFET process by selective EPI and etch Brent A. Anderson 2011-06-14
7952088 Semiconducting device having graphene channel Brent A. Anderson 2011-05-31
7951678 Metal-gate high-k reference structure Brent A. Anderson 2011-05-31
7943997 Fully-depleted low-body doping field effect transistor (FET) with reverse short channel effects (SCE) induced by self-aligned edge back-gate(s) James W. Adkisson, Brent A. Anderson, Andres Bryant, William F. Clark, Jr. 2011-05-17