Issued Patents All Time
Showing 76–100 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7488640 | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same | Nestor A. Bojarczuk, Supratik Guha, Lars-Ake Ragnarsson | 2009-02-10 |
| 7488656 | Removal of charged defects from metal oxide-gate stacks | Matthew W. Copel, Supratik Guha, Richard A. Haight, Fenton R. McFeely, Vijay Narayanan | 2009-02-10 |
| 7479683 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Matthew W. Copel, Martin M. Frank, Evgeni Gousev +4 more | 2009-01-20 |
| 7452767 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Matthew W. Copel, Martin M. Frank, Evgeni Gousev +4 more | 2008-11-18 |
| 7242055 | Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide | Nestor A. Bojarczuk, Cyril Cabral, Jr., Martin M. Frank, Evgeni Gousev, Supratik Guha +4 more | 2007-07-10 |
| 7183604 | High dielectric constant device | Jerry Chen, Chao Zhao | 2007-02-27 |
| 7115959 | Method of forming metal/high-k gate stacks with high mobility | Wanda Andreoni, Alessandro C. Callegari, Alessandro Curioni, Christopher P. D'Emic, Evengi Gousev +9 more | 2006-10-03 |
| 7105889 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Matthew W. Copel, Martin M. Frank, Evgeni Gousev +4 more | 2006-09-12 |
| 7078301 | Rare earth metal oxide memory element based on charge storage and method for manufacturing same | Nestor A. Bojarczuk, Supratik Guha | 2006-07-18 |
| 6958506 | High-dielectric constant insulators for feol capacitors | Evgeni Gousev, Harald Okorn-Schmidt, Arne Ballantine, Douglas A. Buchanan, Douglas D. Coolbaugh | 2005-10-25 |
| 6894338 | Rare earth metal oxide memory element based on charge storage and method for manufacturing same | Nestor A. Bojarczuk, Supratik Guha | 2005-05-17 |
| 6861728 | Dielectric stack without interfacial layer | Nestor A. Bojarczuk, Matthew W. Copel, Supratik Guha | 2005-03-01 |
| 6831339 | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same | Nestor A. Bojarczuk, Supratik Guha, Lars-Ake Ragnarsson | 2004-12-14 |
| 6803266 | Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby | Paul M. Solomon, Douglas A. Buchanan, Kathryn Guarini, Fenton R. McFeely, Huiling Shang +1 more | 2004-10-12 |
| 6770501 | Deuterium reservoirs and ingress paths | Jay Burnham, Thomas G. Ference, Steven W. Mittl, Anthony K. Stamper | 2004-08-03 |
| 6753556 | Silicate gate dielectric | Matthew W. Copel, Frances M. Ross | 2004-06-22 |
| 6667207 | High-dielectric constant insulators for FEOL capacitors | Arne Ballantine, Douglas A. Buchanan, Douglas D. Coolbaugh, Evgeni Gousev, Harald Okorn-Schmidt | 2003-12-23 |
| 6603181 | MOS device having a passivated semiconductor-dielectric interface | Paul M. Solomon, Douglas A. Buchanan, Kathryn Guarini, Fenton R. McFeely, Huiling Shang +1 more | 2003-08-05 |
| 6602772 | Method for non-contact stress evaluation of wafer gate dielectric reliability | Wagdi W. Abadeer, James H. Stathis | 2003-08-05 |
| 6541079 | Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique | Nestor A. Bojarczuk, Supratik Guha | 2003-04-01 |
| 6528374 | Method for forming dielectric stack without interfacial layer | Nestor A. Bojarczuk, Matthew W. Copel, Supratik Guha | 2003-03-04 |
| 6521977 | Deuterium reservoirs and ingress paths | Jay Burnham, Thomas G. Ference, Steven W. Mittl, Anthony K. Stamper | 2003-02-18 |
| 6511873 | High-dielectric constant insulators for FEOL capacitors | Arne Ballantine, Douglas A. Buchanan, Douglas D. Coolbaugh, Evgeni Gousev, Harald Okorn-Schmidt | 2003-01-28 |
| 6444592 | Interfacial oxidation process for high-k gate dielectric process integration | Arne Ballantine, Douglas A. Buchanan, Kevin K. Chan, Matthew W. Copel, Christopher P. D'Emic +6 more | 2002-09-03 |
| 6413386 | Reactive sputtering method for forming metal-silicon layer | Alessandro C. Callegari, Michael A. Gribelyuk, Harald Okorn-Schmidt, Theodore H. Zabel | 2002-07-02 |