AR

Alexander Reznicek

IBM: 1182 patents #3 of 70,183Top 1%
Globalfoundries: 77 patents #21 of 4,424Top 1%
ET Elpis Technologies: 9 patents #2 of 121Top 2%
GU Globalfoundries U.S.: 4 patents #206 of 665Top 35%
Samsung: 3 patents #30,683 of 75,807Top 45%
TE Tessera: 3 patents #129 of 271Top 50%
SS Stmicroelectronics Sa: 2 patents #601 of 1,676Top 40%
MT Matheson Tri-Gas: 1 patents #28 of 47Top 60%
IB International Business: 1 patents #4 of 119Top 4%
IM International Machines: 1 patents #1 of 34Top 3%
AS Adeia Semiconductor Solutions: 1 patents #22 of 57Top 40%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
📍 Troy, NY: #1 of 610 inventorsTop 1%
🗺 New York: #2 of 115,490 inventorsTop 1%
Overall (All Time): #40 of 4,157,543Top 1%
1279
Patents All Time

Issued Patents All Time

Showing 726–750 of 1,279 patents

Patent #TitleCo-InventorsDate
9899274 Low-cost SOI FinFET technology Stephen W. Bedell, Joel P. de Souza, Devendra K. Sadana, Dominic J. Schepis 2018-02-20
9893207 Programmable read only memory (ROM) integrated in tight pitch vertical transistor structures Karthik Balakrishnan, Pouya Hashemi, Tak H. Ning 2018-02-13
9893151 Method and apparatus providing improved thermal conductivity of strain relaxed buffer Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi 2018-02-13
9893014 Designable channel FinFET fuse Keith E. Fogel, Pouya Hashemi, Shogo Mochizuki 2018-02-13
9892978 Forming a CMOS with dual strained channels Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz 2018-02-13
9892975 Adjacent strained <100> NFET fins and <110> PFET fins Kangguo Cheng, Bruce B. Doris, Pouya Hashemi 2018-02-13
9892925 Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy Kangguo Cheng, Pouya Hashemi, Shogo Mochizuki 2018-02-13
9887197 Structure containing first and second vertically stacked nanosheets having different crystallographic orientations Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi 2018-02-06
9881798 Metal cap integration by local alloying Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang 2018-01-30
9876075 Method of forming dielectric with air gaps for use in semiconductor devices Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang 2018-01-23
9876015 Tight pitch inverter using vertical transistors Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi 2018-01-23
9875939 Methods of forming uniform and pitch independent fin recess Yue Ke, Benjamin G. Moser, Dominic J. Schepis, Melissa A. Smith, Henry K. Utomo +2 more 2018-01-23
9875896 Method for forming a strained semiconductor layer including replacing an etchable material formed under the strained semiconductor layer with a dielectric layer Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi 2018-01-23
9871140 Dual strained nanosheet CMOS and methods for fabricating Karthik Balakrishnan, Michael A. Guillorn, Pouya Hashemi 2018-01-16
9870953 System on chip material co-integration Takashi Ando, Lukas Czornomaz, Pouya Hashemi 2018-01-16
9865737 Formation of FinFET junction Kevin K. Chan, Pouya Hashemi, Ali Khakifirooz, John A. Ott 2018-01-09
9865714 III-V lateral bipolar junction transistor Pouya Hashemi, Tak H. Ning 2018-01-09
9865587 Method and structure for forming buried ESD with FinFETs Kangguo Cheng, Nicolas Loubet, Xin Miao 2018-01-09
9865538 Metallic blocking layer for reliable interconnects and contacts Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang 2018-01-09
9865511 Formation of strained fins in a finFET device Pouya Hashemi, Ali Khakifirooz 2018-01-09
9865462 Strain relaxed buffer layers with virtually defect free regions Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi 2018-01-09
9859369 Semiconductor device including nanowire transistors with hybrid channels Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz 2018-01-02
9859216 Voidless contact metal structures Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki 2018-01-02
9859219 Copper wiring structures with copper titanium encapsulation Praneet Adusumilli, Oscar van der Straten 2018-01-02
9859301 Methods for forming hybrid vertical transistors Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi 2018-01-02