CZ

Chen Zhang

Huawei: 24 patents #561 of 15,535Top 4%
Futurewei Technologies: 21 patents #72 of 1,563Top 5%
SU Santa Clara University: 11 patents #3 of 80Top 4%
DL Dolby Laboratories Licensing: 8 patents #203 of 815Top 25%
CI Cisco: 4 patents #3,368 of 13,007Top 30%
UN Unknown: 2 patents #12,644 of 83,584Top 20%
AB Asml Netherlands B.V.: 2 patents #1,484 of 3,192Top 50%
ZU Zhejiang Ocean University: 2 patents #7 of 121Top 6%
Sharp Kabushiki Kaisha: 1 patents #6,861 of 10,731Top 65%
ST Sharp Microelectronics Technology: 1 patents #25 of 57Top 45%
BC Beijing Bytedance Network Technology Co.: 1 patents #308 of 765Top 45%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
CS Compagnie Plastic Omnium Se: 1 patents #103 of 239Top 45%
KC Kunshan Go-Visionox Opto-Electronics Co.: 1 patents #185 of 390Top 50%
NU Nanyang Technological University: 1 patents #385 of 1,285Top 30%
📍 Guilderland, NY: #1 of 115 inventorsTop 1%
🗺 New York: #36 of 115,490 inventorsTop 1%
Overall (All Time): #700 of 4,157,543Top 1%
384
Patents All Time

Issued Patents All Time

Showing 101–125 of 384 patents

Patent #TitleCo-InventorsDate
11081482 Fabrication of vertical fin field effect transistors having top air spacers and a self aligned top junction Kangguo Cheng, Xin Miao, Wenyu Xu 2021-08-03
11081400 Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain Kangguo Cheng, Xin Miao, Wenyu Xu 2021-08-03
11081546 Isolation structure for stacked vertical transistors Juntao Li, Kangguo Cheng, Zhenxing Bi 2021-08-03
11069800 Single electron transistor with gap tunnel barriers Kangguo Cheng, Xin Miao, Wenyu Xu 2021-07-20
11069679 Reducing gate resistance in stacked vertical transport field effect transistors Heng Wu, Kangguo Cheng, Tenko Yamashita, Joshua M. Rubin 2021-07-20
11062965 Flipped vertical field-effect-transistor Kangguo Cheng, Xin Miao, Wenyu Xu 2021-07-13
11062959 Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors Kangguo Cheng, Xin Miao, Wenyu Xu 2021-07-13
11049935 Non-planar field effect transistor devices with low-resistance metallic gate structures Kangguo Cheng, Wenyu Xu, Xin Miao 2021-06-29
11038015 Non-planar field effect transistor devices with low-resistance metallic gate structures Kangguo Cheng, Wenyu Xu, Xin Miao 2021-06-15
11011643 Nanosheet FET including encapsulated all-around source/drain contact Peng Xu, Chun Wing Yeung 2021-05-18
11011528 Asymmetric gate edge spacing for SRAM structures Alexander Reznicek, Ruilong Xie, Chun-Chen Yeh 2021-05-18
11011411 Semiconductor wafer having integrated circuits with bottom local interconnects Xin Miao, Wenyu Xu, Kangguo Cheng 2021-05-18
11004856 Stacked vertical transistor memory cell with epi connections Tenko Yamashita, Kangguo Cheng, Heng Wu 2021-05-11
10998233 Mechanically stable complementary field effect transistors Ruilong Xie, Alexander Reznicek, Chun-Chen Yeh 2021-05-04
D917575 Handheld tire inflator 2021-04-27
10991798 Replacement sacrificial nanosheets having improved etch selectivity Wenyu Xu, Kangguo Cheng, Xin Miao 2021-04-27
10991797 Self-aligned two-dimensional material transistors Peng Xu, Chun Wing Yeung 2021-04-27
10991619 Top via process accounting for misalignment by increasing reliability Lawrence A. Clevenger, Benjamin D. Briggs, Brent A. Anderson, Chih-Chao Yang 2021-04-27
10985161 Single diffusion break isolation for gate-all-around field-effect transistor devices Wenyu Xu, Xin Miao, Kangguo Cheng 2021-04-20
10985064 Buried power and ground in stacked vertical transport field effect transistors Heng Wu, Kangguo Cheng, Tenko Yamashita 2021-04-20
10984839 Voltage regulation circuit Yangyang Tang, Enyi Yao 2021-04-20
10971522 High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator Xin Miao, Kangguo Cheng, Wenyu Xu 2021-04-06
10964603 Hybrid gate stack integration for stacked vertical transport field-effect transistors Tenko Yamashita, Takashi Ando, Oleg Gluschenkov, Koji Watanabe 2021-03-30
10964602 Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain Kangguo Cheng, Xin Miao, Wenyu Xu 2021-03-30
10964601 Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain Kangguo Cheng, Xin Miao, Wenyu Xu 2021-03-30