Issued Patents All Time
Showing 151–175 of 384 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10833073 | Vertical transistors with different gate lengths | Xin Miao, Kangguo Cheng, Juntao Li | 2020-11-10 |
| 10833079 | Dual transport orientation for stacked vertical transport field-effect transistors | Tenko Yamashita, Kangguo Cheng, Heng Wu | 2020-11-10 |
| 10833069 | Logic gate designs for 3D monolithic direct stacked VTFET | Tenko Yamashita, Terence B. Hook | 2020-11-10 |
| 10833158 | III-V segmented finFET free of wafer bonding | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-11-10 |
| 10833176 | Selectively formed gate sidewall spacer | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-11-10 |
| 10833081 | Forming isolated contacts in a stacked vertical transport field effect transistor (VTFET) | Heng Wu, Joshua M. Rubin, Tenko Yamashita | 2020-11-10 |
| 10833157 | iFinFET | Juntao Li, Kangguo Cheng, Xin Miao | 2020-11-10 |
| 10811495 | Vertical field effect transistor with uniform gate length | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-10-20 |
| 10811322 | Different gate widths for upper and lower transistors in a stacked vertical transport field-effect transistor structure | Heng Wu, Kangguo Cheng, Tenko Yamashita | 2020-10-20 |
| 10796967 | Vertical field effect transistor (FET) with controllable gate length | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-10-06 |
| 10796966 | Vertical FET with various gate lengths by an oxidation process | Xin Miao, Kangguo Cheng | 2020-10-06 |
| 10790271 | Perpendicular stacked field-effect transistor device | Zheng Xu, Ruqiang Bao, Dongbing Shao | 2020-09-29 |
| 10784364 | Nanosheet with changing SiGe pecentage for SiGe lateral recess | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-09-22 |
| 10777468 | Stacked vertical field-effect transistors with sacrificial layer patterning | Tenko Yamashita, Kangguo Cheng, Oleg Gluschenkov | 2020-09-15 |
| 10763327 | Nanosheet MOSFET with gate fill utilizing replacement spacer | Chun Wing Yeung | 2020-09-01 |
| 10764577 | Non-MPM mode coding for intra prediction in video coding | Minqiang Jiang, Taru Kanchan, Jianhua Zheng, Nam Ling | 2020-09-01 |
| 10756205 | Double gate two-dimensional material transistor | Peng Xu, Chun Wing Yeung | 2020-08-25 |
| 10741681 | Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly | Chi-Chun Liu, Chun Wing Yeung | 2020-08-11 |
| 10741557 | Hybrid high mobility channel transistors | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-08-11 |
| 10734502 | Prevention of extension narrowing in nanosheet field effect transistors | Tenko Yamashita, Chun Wing Yeung | 2020-08-04 |
| 10734287 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Wenyu Xu | 2020-08-04 |
| 10734501 | Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance | Xin Miao, Kangguo Cheng, Wenyu Xu | 2020-08-04 |
| 10727139 | Three-dimensional monolithic vertical field effect transistor logic gates | Terry Hook, Ardasheir Rahman, Joshua M. Rubin | 2020-07-28 |
| 10700195 | Reduced resistance source and drain extensions in vertical field effect transistors | Peng Xu, Chun Wing Yeung | 2020-06-30 |
| 10692768 | Vertical transport field-effect transistor architecture | Joshua M. Rubin, Oleg Gluschenkov, Tenko Yamashita | 2020-06-23 |