Issued Patents All Time
Showing 51–75 of 175 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9793171 | Buried source-drain contact for integrated circuit transistor devices and method of making same | Qing Liu, Ruilong Xie, Chun-Chen Yeh, William J. Taylor, Jr. | 2017-10-17 |
| 9773867 | FinFET semiconductor devices with replacement gate structures | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2017-09-26 |
| 9755031 | Trench epitaxial growth for a FinFET device having reduced capacitance | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2017-09-05 |
| 9748352 | Multi-channel gate-all-around FET | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2017-08-29 |
| 9685555 | High-reliability, low-resistance contacts for nanoscale transistors | Qing Liu, Nicolas Loubet, Chun-Chen Yeh, Ruilong Xie | 2017-06-20 |
| 9666791 | Topological method to build self-aligned MTJ without a mask | Xunyuan Zhang, Ruilong Xie, Seowoo Nam, Hyun-Jin Cho | 2017-05-30 |
| 9660050 | Replacement low-k spacer | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie | 2017-05-23 |
| 9660083 | LDMOS finFET device and method of manufacture using a trench confined epitaxial growth process | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2017-05-23 |
| 9660057 | Method of forming a reduced resistance fin structure | Qing Liu, Ruilong Xie, Chun-Chen Yeh, Kejia Wang | 2017-05-23 |
| 9653579 | Method for making semiconductor device with filled gate line end recesses | Qing Liu, Ruilong Xie, Chun-Chen Yeh, Kejia Wang | 2017-05-16 |
| 9634115 | Methods of forming a protection layer on a semiconductor device and the resulting device | Ruilong Xie, Chanro Park | 2017-04-25 |
| 9634004 | Forming reliable contacts on tight semiconductor pitch | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2017-04-25 |
| 9633906 | Gate structure cut after formation of epitaxial active regions | Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2017-04-25 |
| 9627377 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Ali Khakifirooz, Shom Ponoth +4 more | 2017-04-18 |
| 9620505 | Semiconductor device with different fin sets | Qing Liu, Ruilong Xie, Chun-Chen Yeh, Kejia Wang, Daniel Chanemougame | 2017-04-11 |
| 9601387 | Method of making threshold voltage tuning using self-aligned contact cap | Chanro Park, Hoon Kim | 2017-03-21 |
| 9583597 | Asymmetric FinFET semiconductor devices and methods for fabricating the same | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2017-02-28 |
| 9576956 | Method and structure of forming controllable unmerged epitaxial material | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2017-02-21 |
| 9570583 | Recessing RMG metal gate stack for forming self-aligned contact | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie | 2017-02-14 |
| 9564501 | Reduced trench profile for a gate | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2017-02-07 |
| 9564358 | Forming reliable contacts on tight semiconductor pitch | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2017-02-07 |
| 9559018 | Dual channel finFET with relaxed pFET region | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2017-01-31 |
| 9559009 | Gate structure cut after formation of epitaxial active regions | Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2017-01-31 |
| 9543426 | Semiconductor devices with self-aligned contacts and low-k spacers | Ruilong Xie, Kangguo Cheng, Ali Khakifirooz | 2017-01-10 |
| 9536981 | Field effect transistor device spacers | Sanjay C. Mehta, Tenko Yamashita | 2017-01-03 |