Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10121868 | Methods of forming epi semiconductor material on a thinned fin in the source/drain regions of a FinFET device | Yi Qi, Hsien-Ching Lo, Kwan-Yong Lim, Hui Zhan | 2018-11-06 |
| 10068810 | Multiple Fin heights with dielectric isolation | Xusheng Wu, Yi Qi, Hsien-Ching Lo, Sipeng Gu | 2018-09-04 |
| 9947769 | Multiple-layer spacers for field-effect transistors | Tao Han, Zhenyu Hu, Jinping Liu, Hsien-Ching Lo | 2018-04-17 |
| 9887094 | Methods of forming EPI semiconductor material on the source/drain regions of a FinFET device | Yi Qi, Hsien-Ching Lo, Yanping Shen, Hui Zhan | 2018-02-06 |
| 9577040 | FinFET conformal junction and high epi surface dopant concentration method and device | Peijie Feng, Yanxiang Liu, Shesh Mani Pandey, Francis Benistant | 2017-02-21 |
| 9559176 | FinFET conformal junction and abrupt junction with reduced damage method and device | Peijie Feng, Yanxiang Liu, Shesh Mani Pandey, Francis Benistant | 2017-01-31 |
| 9490174 | Fabricating raised fins using ancillary fin structures | Xusheng Wu, Min-hwa Chi | 2016-11-08 |
| 9419101 | Multi-layer spacer used in finFET | Hong Yu, Zhao Lun, Tao Han, Hsien-Ching Lo, Basab Banerjee +2 more | 2016-08-16 |
| 9406752 | FinFET conformal junction and high EPI surface dopant concentration method and device | Peijie Feng, Yanxiang Liu, Shesh Mani Pandey, Francis Benistant | 2016-08-02 |
| 9397162 | FinFET conformal junction and abrupt junction with reduced damage method and device | Peijie Feng, Yanxiang Liu, Shesh Mani Pandey, Francis Benistant | 2016-07-19 |
| 9337306 | Multi-phase source/drain/gate spacer-epi formation | Xusheng Wu, Hong Yu, Zhao Lun | 2016-05-10 |