Issued Patents All Time
Showing 51–75 of 189 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9514050 | Caching in multicore and multiprocessor architectures | Ian Rudolf Bratt, Matthew Mattina | 2016-12-06 |
| 9515135 | Edge termination structures for silicon carbide devices | Sei-Hyung Ryu, Allan Ward | 2016-12-06 |
| 9478537 | High-gain wide bandgap darlington transistors and related methods of fabrication | Qingchun Zhang | 2016-10-25 |
| 9478616 | Semiconductor device having high performance channel | Sarit Dhar, Sei-Hyung Ryu, Lin Cheng | 2016-10-25 |
| 9425265 | Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure | Edward Robert Van Brunt, Vipindas Pala, Lin Cheng | 2016-08-23 |
| 9396946 | Wet chemistry processes for fabricating a semiconductor device with increased channel mobility | Sarit Dhar, Lin Cheng, Sei-Hyung Ryu, John Williams Palmour, Erik Maki +2 more | 2016-07-19 |
| 9361402 | Tiered index management | Blaine French, Shailesh Mungikar, Nandan Marathe | 2016-06-07 |
| 9349797 | SiC devices with high blocking voltage terminated by a negative bevel | Lin Cheng, Michael O'Loughlin, Albert Augustus Burk, Jr., John Williams Palmour | 2016-05-24 |
| 9349596 | Methods of processing semiconductor wafers having silicon carbide power devices thereon | Sei-Hyung Ryu, Matthew Donofrio | 2016-05-24 |
| 9337268 | SiC devices with high blocking voltage terminated by a negative bevel | Qingchun Zhang, Craig Capell, Sei-Hyung Ryu | 2016-05-10 |
| 9331197 | Vertical power transistor device | Vipindas Pala, Lin Cheng, Daniel Jenner Lichtenwalner, John Williams Palmour | 2016-05-03 |
| 9312343 | Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials | Qingchun Zhang, Sei-Hyung Ryu, Sarit Dhar | 2016-04-12 |
| 9306061 | Field effect transistor devices with protective regions | Lin Cheng, Vipindas Pala, John Williams Palmour | 2016-04-05 |
| 9298618 | Managing cache memory in a parallel processing environment | David Wentzlaff, Matthew Mattina | 2016-03-29 |
| 9269580 | Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof | Sarit Dhar, Lin Cheng, Sei-Hyung Ryu, John Williams Palmour, Jason Gurganus | 2016-02-23 |
| 9240476 | Field effect transistor devices with buried well regions and epitaxial layers | Vipindis Pala, Lin Cheng, Jason Henning, John Williams Palmour | 2016-01-19 |
| 9236433 | Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer | Vipindas Pala, Edward Robert Van Brunt, Daniel Jenner Lichtenwalner, Lin Cheng, John Williams Palmour | 2016-01-12 |
| 9231122 | Schottky diode | Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, John Williams Palmour, Scott Allen | 2016-01-05 |
| 9142662 | Field effect transistor devices with low source resistance | Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas +1 more | 2015-09-22 |
| 9142668 | Field effect transistor devices with buried well protection regions | Lin Cheng, Vipindas Pala, John Williams Palmour | 2015-09-22 |
| 9111919 | Field effect device with enhanced gate dielectric structure | Daniel Jenner Lichtenwalner, Lin Cheng, Vipindas Pala, John Williams Palmour | 2015-08-18 |
| 9064738 | Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices | Edward Robert Van Brunt, Vipindas Pala, Lin Cheng | 2015-06-23 |
| 9064710 | Transistor with A-face conductive channel and trench protecting well region | Qingchun Zhang, Charlotte Jonas | 2015-06-23 |
| 9059197 | Electronic device structure with a semiconductor ledge layer for surface passivation | Qingchun Zhang | 2015-06-16 |
| 9029945 | Field effect transistor devices with low source resistance | Sei-Hyung Ryu, Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas +1 more | 2015-05-12 |