Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6071811 | Deposition of titanium nitride films having improved uniformity | — | 2000-06-06 |
| 6059872 | Smooth titanium nitride films having low resistivity | Seshadri Ramaswami | 2000-05-09 |
| 6051114 | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition | Tse-Yong Yao, Zheng Xu, Xing Chen, John Arthur Urbahn, Lawrence P. Bourget | 2000-04-18 |
| 6045666 | Aluminum hole filling method using ionized metal adhesion layer | Peter Satitpunwaycha, Gongda Yao, Zheng Xu | 2000-04-04 |
| 5972178 | Continuous process for forming improved titanium nitride barrier layers | Murali Narasimhan, Nitin Khurana, Bradley O. Stimson | 1999-10-26 |
| 5961793 | Method of reducing generation of particulate matter in a sputtering chamber | — | 1999-10-05 |
| 5943600 | Treatment of a titanium nitride layer to improve resistance to elevated temperatures | Roderick C. Mosely | 1999-08-24 |
| 5925225 | Method of producing smooth titanium nitride films having low resistivity | Seshadri Ramaswami | 1999-07-20 |
| 5919342 | Method for depositing golden titanium nitride | — | 1999-07-06 |
| 5882399 | Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect | Barry L. Hogan, Seshadri Ramaswami | 1999-03-16 |
| 5759360 | Wafer clean sputtering process | Jaim Nulman | 1998-06-02 |
| 5746460 | End effector for semiconductor wafer transfer device and method of moving a wafer with an end effector | Dan Marohl | 1998-05-05 |
| 5707498 | Avoiding contamination from induction coil in ionized sputtering | — | 1998-01-13 |
| 5697427 | Apparatus and method for cooling a substrate | Dan Marohl | 1997-12-16 |
| 5521120 | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation | Jaim Nulman | 1996-05-28 |
| 5504043 | Barrier layers and aluminum contacts | Edith Ong | 1996-04-02 |
| 5434044 | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation | Jaim Nulman | 1995-07-18 |
| 5378660 | Barrier layers and aluminum contacts | Edith Ong | 1995-01-03 |
| 5360996 | Titanium nitride/titanium silicide multiple layer barrier with preferential (111) crystallographic orientation on titanium nitride surface | Jaim Nulman | 1994-11-01 |
| 5242860 | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation | Jaim Nulman | 1993-09-07 |