Issued Patents All Time
Showing 26–49 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6717846 | Non-volatile semiconductor memory having split-gate memory cells mirrored in a virtual ground configuration | Peter Wung Lee, Hung-Sheng Chen | 2004-04-06 |
| 6674669 | Nonvolatile memory structures and access methods | Hsing Tuan, Li-Chun Li | 2004-01-06 |
| 6660585 | Stacked gate flash memory cell with reduced disturb conditions | Peter Wung Lee, Hsing-Ya Tsao, Hung-Sheng Chen, Fu-Chang Hsu | 2003-12-09 |
| 6584018 | Nonvolatile memory structures and access methods | Hsing Tuan, Li-Chun Li | 2003-06-24 |
| 6570215 | Nonvolatile memories with floating gate spacers, and methods of fabrication | Hsing Tuan, Chung Wai Leung, Chia-Shun Hsiao | 2003-05-27 |
| 6562681 | Nonvolatile memories with floating gate spacers, and methods of fabrication | Hsing Tuan, Chung Wai Leung, Chia-Shun Hsiao | 2003-05-13 |
| 6410956 | Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices | Scott Luning, Mark Randolph, Nicholas H. Tripsas, Daniel Sobek, Janet Wang +2 more | 2002-06-25 |
| 6275415 | Multiple byte channel hot electron programming using ramped gate and source bias voltage | Sameer Haddad, Ravi Sunkavalli, Wing Leung, John Chen, Ravi Prakash Gutala +1 more | 2001-08-14 |
| 6262622 | Breakdown-free high voltage input circuitry | Peter Wung Lee, Fu-Chang Hsu, Hsing-Ya Tsao, Hung-Sheng Chen | 2001-07-17 |
| 6258668 | Array architecture and process flow of nonvolatile memory devices for mass storage applications | Peter Wung Lee, Hung-Sheng Chen | 2001-07-10 |
| 6252276 | Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide | Mark T. Ramsbey, Sameer Haddad, Yu Sun, Chi Chang | 2001-06-26 |
| 6236596 | Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices | Daniel Sobek, Timothy Thurgate, Scott Luning, Sameer Haddad | 2001-05-22 |
| 6188604 | Flash memory cell & array with improved pre-program and erase characteristics | David Kuan-Yu Liu, Kou-Su Chen | 2001-02-13 |
| 6185133 | Flash EPROM using junction hot hole injection for erase | David Kuan-Yu Liu, Kou-Su Chen | 2001-02-06 |
| 6134150 | Erase condition for flash memory | Fu-Chang Hsu, Hsing-Ya Tsao, Peter Wung Lee, Hung-Sheng Chen | 2000-10-17 |
| 6103602 | Method and system for providing a drain side pocket implant | Timothy Thurgate | 2000-08-15 |
| 6046932 | Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM | Colin S. Bill, Sameer Haddad, Jonathan Su | 2000-04-04 |
| 6025240 | Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices | Scott Luning, Mark Randolph, Nicholas H. Tripsas, Daniel Sobek, Janet Wang +2 more | 2000-02-15 |
| 6001713 | Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device | Mark T. Ramsbey, Sameer Haddad, Chi Chang, Yu Sun, Raymond Yu | 1999-12-14 |
| 5972751 | Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device | Mark T. Ramsbey, Sameer Haddad, Yu Sun, Chi Chang | 1999-10-26 |
| 5940709 | Method and system for source only reoxidation after junction implant for flash memory devices | — | 1999-08-17 |
| 5888867 | Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration | Janet Wang, Scott Luning, Nicholas H. Tripsas | 1999-03-30 |
| 5875130 | Method for programming flash electrically erasable programmable read-only memory | Sameer Haddad, Wing Leung, John Chen, Ravi Sunkavalli, Ravi Prakash Gutala +2 more | 1999-02-23 |
| 5856946 | Memory cell programming with controlled current injection | Sameer Haddad, Chi Chang | 1999-01-05 |