Issued Patents All Time
Showing 51–71 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6306560 | Ultra-thin resist and SiON/oxide hard mask for metal etch | Fei Wang, Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson | 2001-10-23 |
| 6287918 | Process for fabricating a metal semiconductor device component by lateral oxidization | Qi Xiang, Scott A. Bell | 2001-09-11 |
| 6214683 | Process for fabricating a semiconductor device component using lateral metal oxidation | Qi Xiang, Scott A. Bell | 2001-04-10 |
| 6211044 | Process for fabricating a semiconductor device component using a selective silicidation reaction | Qi Xiang, Scott A. Bell | 2001-04-03 |
| 6200884 | Method for shaping photoresist mask to improve high aspect ratio ion implantation | Mark S. Chang | 2001-03-13 |
| 6200907 | Ultra-thin resist and barrier metal/oxide hard mask for metal etch | Fei Wang, Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson | 2001-03-13 |
| 6184128 | Method using a thin resist mask for dual damascene stop layer etch | Fei Wang, Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson | 2001-02-06 |
| 6171763 | Ultra-thin resist and oxide/nitride hard mask for metal etch | Fei Wang, Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson | 2001-01-09 |
| 6165695 | Thin resist with amorphous silicon hard mask for via etch application | Christopher F. Lyons, Harry J. Levinson, Khanh B. Nguyen, Fei Wang, Scott A. Bell | 2000-12-26 |
| 6162587 | Thin resist with transition metal hard mask for via etch application | Christopher F. Lyons, Harry J. Levinson, Khanh B. Nguyen, Fei Wang, Scott A. Bell | 2000-12-19 |
| 6156658 | Ultra-thin resist and silicon/oxide hard mask for metal etch | Fei Wang, Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson | 2000-12-05 |
| 6140023 | Method for transferring patterns created by lithography | Harry J. Levinson, Scott A. Bell, Christopher F. Lyons, Khanh B. Nguyen, Fei Wang | 2000-10-31 |
| 6133129 | Method for fabricating a metal structure with reduced length that is beyond photolithography limitations | Qi Xiang, Scott A. Bell | 2000-10-17 |
| 6127070 | Thin resist with nitride hard mask for via etch application | Christopher F. Lyons, Harry J. Levinson, Khanh B. Nguyen, Fei Wang, Scott A. Bell | 2000-10-03 |
| 6121155 | Integrated circuit fabrication critical dimension control using self-limiting resist etch | Scott A. Bell, Qi Xiang | 2000-09-19 |
| 6107172 | Controlled linewidth reduction during gate pattern formation using an SiON BARC | Scott A. Bell, Daniel A. Steckert | 2000-08-22 |
| 6103611 | Methods and arrangements for improved spacer formation within a semiconductor device | William G. En, Minh Van Ngo, David K. Foote, Scott A. Bell, Olov Karlsson +1 more | 2000-08-15 |
| 6060377 | Method for fabricating a polysilicon structure with reduced length that is beyond photolithography limitations | Qi Xiang, Scott A. Bell | 2000-05-09 |
| 6020269 | Ultra-thin resist and nitride/oxide hard mask for metal etch | Fei Wang, Christopher F. Lyons, Khanh B. Nguyen, Scott A. Bell, Harry J. Levinson | 2000-02-01 |
| 5990524 | Silicon oxime spacer for preventing over-etching during local interconnect formation | William G. En, Minh Van Ngo, David K. Foote, Scott A. Bell, Olov Karlsson +1 more | 1999-11-23 |
| 5965461 | Controlled linewidth reduction during gate pattern formation using a spin-on barc | Scott A. Bell, Daniel A. Steckert | 1999-10-12 |