Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
BY

Bin Yu

AMAMD: 293 patents #2 of 9,279Top 1%
Samsung: 158 patents #155 of 75,807Top 1%
ZTZte: 46 patents #56 of 3,593Top 2%
Huawei: 17 patents #803 of 15,535Top 6%
INInfoblox: 11 patents #4 of 58Top 7%
STSpeedlink Technology: 11 patents #2 of 19Top 15%
HCHuizhou Speed Wireless Technology Co.: 7 patents #1 of 14Top 8%
HCHuizhou Tcl Mobile Communication Co.: 5 patents #22 of 355Top 7%
J(Jrd Communication (Shenzhen): 5 patents #8 of 190Top 5%
Globalfoundries: 4 patents #817 of 4,424Top 20%
ZCZhejiang Yankon Mega Lighting Co.: 3 patents #2 of 23Top 9%
YUYanshan University: 3 patents #34 of 296Top 15%
University of California: 3 patents #2,984 of 18,278Top 20%
HOHoneywell: 3 patents #3,629 of 14,447Top 30%
SESemtech: 3 patents #41 of 201Top 25%
PUPolytechnic Institute Of New York University: 3 patents #18 of 85Top 25%
NUNanjing University: 3 patents #249 of 887Top 30%
Microsoft: 3 patents #13,382 of 40,388Top 35%
CTCreative Technology: 3 patents #88 of 358Top 25%
PayPal: 3 patents #547 of 1,973Top 30%
3M: 2 patents #5,326 of 11,543Top 50%
ATAT&T: 2 patents #7,280 of 18,772Top 40%
HPHP: 2 patents #5,870 of 16,619Top 40%
NUNankai University: 2 patents #20 of 245Top 9%
PHPhyton Holdings: 2 patents #16 of 49Top 35%
QRQuantum Leap Research: 2 patents #4 of 20Top 20%
SLSpansion Llc.: 2 patents #309 of 769Top 45%
TCTcl Communi Cati On ( Ningbo) Co.: 2 patents #1 of 30Top 4%
TLTeknion Limited: 2 patents #10 of 38Top 30%
UKUniversity Of Hong Kong: 2 patents #80 of 561Top 15%
UNUnknown: 2 patents #12,644 of 83,584Top 20%
PUPolytechnic University: 1 patents #33 of 69Top 50%
CICisco: 1 patents #7,901 of 13,007Top 65%
SUSouthwest Petroleum University: 1 patents #417 of 1,158Top 40%
CCChina Unionpay Co.: 1 patents #78 of 235Top 35%
ESEntit Software: 1 patents #130 of 462Top 30%
SCSuperd Co.: 1 patents #21 of 36Top 60%
CCChina Petroleum & Chemical: 1 patents #836 of 1,719Top 50%
TETencent: 1 patents #4,257 of 8,131Top 55%
ECEmc Ip Holding Company: 1 patents #2,584 of 4,608Top 60%
NASA: 1 patents #1,418 of 3,881Top 40%
BUBeihang University: 1 patents #185 of 638Top 30%
EBEbay: 1 patents #1,423 of 2,086Top 70%
JAJohnson Electric International Ag: 1 patents #163 of 404Top 45%
JSJohnson Electric S.A.: 1 patents #231 of 526Top 45%
HUHussmann: 1 patents #92 of 167Top 60%
MUMichigan State University: 1 patents #51 of 212Top 25%
HCHangzhou Haicun Information Technology Co.: 1 patents #6 of 10Top 60%
EUEast China Jiaotong University: 1 patents #28 of 120Top 25%
NCNingbo Yamao Optoelectronics Co.: 1 patents #6 of 7Top 90%
CTChina University Of Mining And Technology: 1 patents #288 of 815Top 40%
Beijing, TX: #1 of 183 inventorsTop 1%
Overall (All Time): #219 of 4,157,543Top 1%
634 Patents All Time

Issued Patents All Time

Showing 526–550 of 634 patents

Patent #TitleCo-InventorsDate
6426259 Vertical field effect transistor with metal oxide as sidewall gate insulator 2002-07-30
6423599 Method for fabricating a field effect transistor having dual gates in SOI (semiconductor on insulator) technology 2002-07-23
6423647 Formation of dielectric regions of different thicknesses at selective location areas during laser thermal processes 2002-07-23
6420218 Ultra-thin-body SOI MOS transistors having recessed source and drain regions 2002-07-16
6420767 Capacitively coupled DTMOS on SOI Srinath Krishnan, John C. Holst 2002-07-16
6413829 Field effect transistor in SOI technology with schottky-contact extensions 2002-07-02
6414355 Silicon-on-insulator (SOI) chip having an active layer of non-uniform thickness Judy Xilin An, William G. En 2002-07-02
6410371 Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer William G. En, Judy Xilin An, Concetta Riccobene 2002-06-25
6406986 Fabrication of a wide metal silicide on a narrow polysilicon gate structure 2002-06-18
6406951 Fabrication of fully depleted field effect transistor with raised source and drain in SOI technology 2002-06-18
6403434 Process for manufacturing MOS transistors having elevated source and drain regions and a high-k gate dielectric 2002-06-11
6403981 Double gate transistor having a silicon/germanium channel region 2002-06-11
6403433 Source/drain doping technique for ultra-thin-body SOI MOS transistors Jonathan Kluth, Emi Ishida 2002-06-11
6399469 Fabrication of a notched gate structure for a field effect transistor using a single patterning and etch process 2002-06-04
6399450 Low thermal budget process for manufacturing MOS transistors having elevated source and drain regions 2002-06-04
6399427 Formation of ultra-thin active device area on semiconductor on insulator (SOI) substrate 2002-06-04
6395609 Method for fabricating a bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current 2002-05-28
6395589 Fabrication of fully depleted field effect transistor with high-K gate dielectric in SOI technology 2002-05-28
6391753 Process for forming gate conductors 2002-05-21
6391782 Process for forming multiple active lines and gate-all-around MOSFET 2002-05-21
6391728 Method of forming a highly localized halo profile to prevent punch-through 2002-05-21
6391695 Double-gate transistor formed in a thermal process 2002-05-21
6383904 Fabrication of self-aligned front gate and back gate of a field effect transistor in semiconductor on insulator 2002-05-07
6380590 SOI chip having multiple threshold voltage MOSFETs by using multiple channel materials and method of fabricating same 2002-04-30
6380019 Method of manufacturing a transistor with local insulator structure Ming-Ren Lin, Shekhar Pramanick 2002-04-30