Issued Patents All Time
Showing 26–50 of 265 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10777661 | Method of manufacturing shielded gate trench MOSFET devices | — | 2020-09-15 |
| 10755931 | Semiconductor device and method of forming including superjunction structure formed using angled implant process | Karthik Padmanabhan, Madhur Bobde, Lingpeng Guan, Lei Zhang | 2020-08-25 |
| 10714574 | Shielded trench devices | — | 2020-07-14 |
| 10686035 | Nano-tube MOSFET technology and devices | Daniel Ng, Lingping Guan, Anup Bhalla, Wilson Ma, Moses Ho +1 more | 2020-06-16 |
| 10680097 | MOSFET device and fabrication | John Chen, Il Kwan Lee, Hong Chang, Wenjun Li, Anup Bhalla | 2020-06-09 |
| 10608092 | Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts | John Chen, Daniel Ng, Wenjun Li | 2020-03-31 |
| 10593759 | Nanotube semiconductor devices | Xiaobin Wang, Anup Bhalla, John Chen, Hong Chang | 2020-03-17 |
| 10529810 | Lateral semiconductor power devices | Mohamed N. Darwish, Jun Zeng, Richard A. Blanchard | 2020-01-07 |
| 10446679 | Method for forming a lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Karthik Padmanabhan | 2019-10-15 |
| 10396158 | Termination structure for nanotube semiconductor devices | Xiaobin Wang, Anup Bhalla, John Chen, Hong Chang | 2019-08-27 |
| 10396150 | Vertical power transistor die with etched beveled edges for increasing breakdown voltage | — | 2019-08-27 |
| 10291065 | Robust and high current smart-plug | Dick Kwai Chan, Kam Wai Lam, JZ Zheng, Wai Yin Shum, Brenton James Judge +2 more | 2019-05-14 |
| 10276387 | Semiconductor device including superjunction structure formed using angled implant process | Karthik Padmanabhan, Madhur Bobde, Lingpeng Guan, Lei Zhang | 2019-04-30 |
| 10243072 | Method for forming a lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Karthik Padmanabhan | 2019-03-26 |
| 10199455 | Dual-gate trench IGBT with buried floating P-type shield | Jun Hu, Madhur Bobde | 2019-02-05 |
| 10192982 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla, Ji Pan +2 more | 2019-01-29 |
| 10186573 | Lateral power MOSFET with non-horizontal RESURF structure | Mohamed N. Darwish, Richard A. Blanchard | 2019-01-22 |
| 10121857 | Nano-tube MOSFET technology and devices | Daniel Ng, Lingping Guan, Anup Bhalla, Wilson Ma, Moses Ho +1 more | 2018-11-06 |
| 10103240 | Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode | Madhur Bobde, Lingpeng Guann, Anup Bhalla | 2018-10-16 |
| 10069005 | Termination design for high voltage device | Lingpeng Guan, Anup Bhalla | 2018-09-04 |
| 10062755 | Nanotube termination structure for power semiconductor devices | Xiaobin Wang, Anup Bhalla, John Chen, Hong Chang | 2018-08-28 |
| 10043736 | Hybrid packaged lead frame based multi-chip semiconductor device with multiple interconnecting structures | Yan Xun Xue, Jun Lu, Peter H. Wilson, Yan Huo, Zhiqiang Niu +1 more | 2018-08-07 |
| 10032861 | Semiconductor device with field threshold MOSFET for high voltage termination | Madhur Bobde | 2018-07-24 |
| 10014381 | Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts | John Chen, Daniel Ng, Wenjun Li | 2018-07-03 |
| 9997593 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Yongping Ding, Xiaobin Wang, Madhur Bobde | 2018-06-12 |