Issued Patents 2025
Showing 51–75 of 98 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12342578 | Stacked layer memory suitable for SRAM and having a long cell | Brent A. Anderson, Albert M. Chu, Junli Wang, Carl Radens | 2025-06-24 |
| 12341099 | Semiconductor backside transistor integration with backside power delivery network | Daniel C. Edelstein, Rajiv V. Joshi, Ravikumar Ramachandran, Eric R. Miller | 2025-06-24 |
| 12341066 | Advanced metal interconnect | Ashim Dutta, Chih-Chao Yang, Lawrence A. Clevenger | 2025-06-24 |
| 12336279 | Fin stack including tensile-strained and compressively strained fin portions | Kangguo Cheng, Julien Frougier, Chanro Park | 2025-06-17 |
| 12336294 | Gate-cut and separation techniques for enabling independent gate control of stacked transistors | Nicolas Loubet, Julien Frougier, Lawrence A. Clevenger, Prasad Bhosale, Junli Wang +2 more | 2025-06-17 |
| 12334442 | Dielectric caps for power and signal line routing | Nicholas Anthony Lanzillo, Lawrence A. Clevenger, Hosadurga Shobha, Huai Huang | 2025-06-17 |
| 12328916 | CPP-agnostic source-drain contact formation for gate-all-around devices with dielectric isolation | Julien Frougier, Kangguo Cheng, Chanro Park, Oleg Gluschenkov | 2025-06-10 |
| 12328859 | Stacked FET SRAM | Carl Radens, Albert M. Chu, Brent A. Anderson, Junli Wang, Julien Frougier +1 more | 2025-06-10 |
| 12324197 | Spin-based gate-all-around transistors | Julien Frougier, Kangguo Cheng, Chanro Park, Andrew Gaul, Min Gyu Sung | 2025-06-03 |
| 12322652 | Local interconnect for cross coupling | Heng Wu, Albert M. Chu, Albert M. Young, Junli Wang, Brent A. Anderson | 2025-06-03 |
| 12324184 | Replacement gate cross-couple for static random-access memory scaling | Carl Radens, Kangguo Cheng, Veeraraghavan S. Basker, Juntao Li | 2025-06-03 |
| 12324207 | Channel protection of gate-all-around devices for performance optimization | Maruf Amin Bhuiyan, Julien Frougier, Eric Miller | 2025-06-03 |
| 12324234 | Fork sheet device with better electrostatic control | Kangguo Cheng, Julien Frougier, Chanro Park | 2025-06-03 |
| 12324237 | Diffusion-break region in stacked-FET integrated circuit device | Alexander Reznicek, Daniel Schmidt, Tsung-Sheng Kang | 2025-06-03 |
| 12317509 | Stacked spin-orbit-torque magnetoresistive random-access memory | Julien Frougier, Kangguo Cheng, Dimitri Houssameddine | 2025-05-27 |
| 12317763 | Memory cell with comb-shaped electrodes | Juntao Li, Kangguo Cheng, Carl Radens | 2025-05-27 |
| 12317762 | Vertical phase change memory device | Kangguo Cheng, Juntao Li, Carl Radens | 2025-05-27 |
| 12317537 | Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure | Dechao Guo, Junli Wang, Alexander Reznicek | 2025-05-27 |
| 12317514 | Resistive random-access memory structures with stacked transistors | Min Gyu Sung, Kangguo Cheng, Julien Frougier, Chanro Park, Soon-Cheon Seo | 2025-05-27 |
| 12310054 | Late replacement bottom isolation for nanosheet devices | Andrew M. Greene, Julien Frougier, Veeraraghavan S. Basker | 2025-05-20 |
| 12310090 | CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor | Heng Wu, Su Chen Fan, Jay William Strane, Hemanth Jagannathan | 2025-05-20 |
| 12310064 | Isolation pillar structures for stacked device structures | Julien Frougier, Kangguo Cheng, Chanro Park, Min Gyu Sung | 2025-05-20 |
| 12310061 | Nanosheet transistor devices with different active channel widths | Julien Frougier, Kangguo Cheng, Chanro Park, Cheng Chi, Jinning Liu | 2025-05-20 |
| 12300617 | Self-aligned buried power rail cap for semiconductor devices | Huimei Zhou, Julien Frougier, Kisik Choi | 2025-05-13 |
| 12295133 | SRAM with backside cross-couple | Albert M. Chu, Carl Radens, Kisik Choi | 2025-05-06 |