| 12433020 |
Multi-VT solution for replacement metal gate bonded stacked FET |
Ruqiang Bao, Dechao Guo, Heng Wu |
2025-09-30 |
| 12424591 |
Method and structure of forming independent contact for staggered CFET |
Ruilong Xie, Albert M. Chu, Albert M. Young, Brent A. Anderson, Ravikumar Ramachandran |
2025-09-23 |
| 12412830 |
Semiconductor device with power via |
Ruilong Xie, Kisik Choi, Julien Frougier, Reinaldo Vega, Lawrence A. Clevenger +2 more |
2025-09-09 |
| 12402408 |
Stacked FETS including devices with thick gate oxide |
Ruilong Xie, Julien Frougier, Nicolas Loubet, Ruqiang Bao, Min Gyu Sung +2 more |
2025-08-26 |
| 12396227 |
Full wrap around backside contact |
Ruilong Xie, Kisik Choi, Julien Frougier, Min Gyu Sung |
2025-08-19 |
| 12389582 |
High density stacked vertical transistor static random access memory structure |
Brent A. Anderson, Albert M. Chu, Hemanth Jagannathan |
2025-08-12 |
| 12376369 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2025-07-29 |
| 12369367 |
Bulk nanosheet with dielectric isolation |
Kangguo Cheng, Bruce B. Doris |
2025-07-22 |
| 12363990 |
Upper and lower gate configurations of monolithic stacked FinFET transistors |
Chen Zhang, Ruilong Xie, Dechao Guo, Sung-Dae Suk |
2025-07-15 |
| 12349445 |
Vertically integrated semiconductor device |
Heng Wu, Teresa J. Wu, Tenko Yamashita |
2025-07-01 |
| 12349458 |
Staggered stacked circuits with increased effective width |
Brent A. Anderson, Albert M. Chu |
2025-07-01 |
| 12342578 |
Stacked layer memory suitable for SRAM and having a long cell |
Brent A. Anderson, Albert M. Chu, Ruilong Xie, Carl Radens |
2025-06-24 |
| 12336294 |
Gate-cut and separation techniques for enabling independent gate control of stacked transistors |
Ruilong Xie, Nicolas Loubet, Julien Frougier, Lawrence A. Clevenger, Prasad Bhosale +2 more |
2025-06-17 |
| 12328859 |
Stacked FET SRAM |
Ruilong Xie, Carl Radens, Albert M. Chu, Brent A. Anderson, Julien Frougier +1 more |
2025-06-10 |
| 12322652 |
Local interconnect for cross coupling |
Heng Wu, Ruilong Xie, Albert M. Chu, Albert M. Young, Brent A. Anderson |
2025-06-03 |
| 12317537 |
Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure |
Ruilong Xie, Dechao Guo, Alexander Reznicek |
2025-05-27 |
| 12310072 |
Middle of line structure with stacked devices |
Su Chen Fan, Ruqiang Bao, Albert M. Young |
2025-05-20 |
| 12278184 |
Vertically-stacked field effect transistor cell |
Albert M. Chu, Albert M. Young, Dechao Guo |
2025-04-15 |
| 12278237 |
Stacked FETS with non-shared work function metals |
Ruilong Xie, Julien Frougier, Dechao Guo, Ruqiang Bao, Rishikesh Krishnan +1 more |
2025-04-15 |
| 12272648 |
Semiconductor device having a backside power rail |
Ruilong Xie, Julien Frougier, Dechao Guo, Lawrence A. Clevenger |
2025-04-08 |
| 12268016 |
Buried power rail formation for vertical field effect transistors |
Ruilong Xie, Brent A. Anderson, Chen Zhang, Heng Wu, Alexander Reznicek |
2025-04-01 |
| 12268026 |
High aspect ratio contact structure with multiple metal stacks |
Brent A. Anderson, Terence B. Hook, Indira Seshadri, Albert M. Young, Stuart A. Sieg +2 more |
2025-04-01 |
