Issued Patents 2025
Showing 1–25 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431469 | Vertically stacked FET with strained channel | Shogo Mochizuki, Juntao Li | 2025-09-30 |
| 12432968 | Nanowire source/drain formation for nanosheet device | Ruilong Xie, Julien Frougier, Alexander Reznicek | 2025-09-30 |
| 12426314 | Strain generation and anchoring in gate-all-around field effect transistors | Julien Frougier, Sung-Dae Suk, Andrew M. Greene, Ruilong Xie | 2025-09-23 |
| 12426338 | Buried power rail with robust connection to a wrap around contact | Ruilong Xie, Julien Frougier, Chanro Park | 2025-09-23 |
| 12419080 | Semiconductor structure with wrapped-around backside contact | Ruilong Xie, Chanro Park, Min Gyu Sung, Julien Frougier | 2025-09-16 |
| 12414352 | Two-dimensional vertical fins | — | 2025-09-09 |
| 12407532 | Gain cell memory based physically unclonable function | — | 2025-09-02 |
| 12402403 | Air gap spacer for metal gates | Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2025-08-26 |
| 12402545 | Stacked cross-point phase change memory | Carl Radens, Ruilong Xie, Juntao Li | 2025-08-26 |
| 12396247 | Work function metal patterning for nanosheet CFETs | Ruilong Xie, Chen Zhang, Juntao Li | 2025-08-19 |
| 12396225 | Method to release nano sheet after nano sheet fin recess | Chanro Park, Ruilong Xie, Juntao Li, Choonghyun Lee | 2025-08-19 |
| 12389813 | Resistive switching memory cell | Julien Frougier, Ruilong Xie, Chanro Park | 2025-08-12 |
| 12389609 | Circuit architecture using transistors with dynamic dual functionality for logic and embedded memory drivers | Julien Frougier, Ruilong Xie, Heng Wu, Min Gyu Sung, Chanro Park | 2025-08-12 |
| 12382665 | Increased gate length at given footprint for nanosheet device | Ruilong Xie, Julien Frougier, Chanro Park | 2025-08-05 |
| 12382662 | Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors | Julien Frougier, Ruilong Xie, Chanro Park, Andrew Gaul | 2025-08-05 |
| 12382719 | Power gating dummy power transistors for back side power delivery networks | Tao Li, Ruilong Xie | 2025-08-05 |
| 12382708 | Vertical stacked nanosheet CMOS transistors with different work function metals | Juntao Li, Ruilong Xie, Chanro Park | 2025-08-05 |
| 12376369 | FinFET devices | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2025-07-29 |
| 12376503 | Phase change material including deuterium | Juntao Li, Arthur Roy Gasasira, LOUIS ZUOGUANG LIU, Amlan Majumdar | 2025-07-29 |
| 12369379 | Nanosheet transistor | Juntao Li, Heng Wu, Peng Xu | 2025-07-22 |
| 12369367 | Bulk nanosheet with dielectric isolation | Bruce B. Doris, Junli Wang | 2025-07-22 |
| 12363977 | Forming dielectric sidewall and bottom dielectric isolation in Fork-FET devices | Julien Frougier, Ruilong Xie, Dimitri Houssameddine | 2025-07-15 |
| 12356680 | Nanosheet device with air-gaped source/drain regions | Huimei Zhou, Yi Song, Ruilong Xie | 2025-07-08 |
| 12349457 | Stacked transistors having bottom contact with replacement spacer | Ruilong Xie, Julien Frougier, Heng Wu | 2025-07-01 |
| 12342738 | Resistive memory for analog computing | — | 2025-06-24 |