| 12432968 |
Nanowire source/drain formation for nanosheet device |
Ruilong Xie, Julien Frougier, Kangguo Cheng |
2025-09-30 |
| 12408369 |
Vertical transport field effect transistors having different threshold voltages along the channel |
Choonghyun Lee, Takashi Ando, Jingyun Zhang |
2025-09-02 |
| 12402544 |
Antenna assisted ReRAM formation |
Youngseok Kim, Soon-Cheon Seo, Injo Ok |
2025-08-26 |
| 12402342 |
Nanosheet device with T-shaped dual inner spacer |
Pouya Hashemi, Takashi Ando, Ruilong Xie |
2025-08-26 |
| 12382682 |
Gate-all-around nanosheet-FET with variable channel geometries for performance optimization |
Julien Frougier, Ruilong Xie, Heng Wu, Chen Zhang |
2025-08-05 |
| 12364164 |
Reactive serial resistance reduction for magnetoresistive random-access memory devices |
Matthias Georg Gottwald, Guohan Hu, Stephen L. Brown |
2025-07-15 |
| 12364174 |
Global heater for phase change memory |
Nanbo Gong, Takashi Ando, Bahman Hekmatshoartabari |
2025-07-15 |
| 12329045 |
Phase change memory programming current leakage reduction |
Injo Ok, Soon-Cheon Seo, Youngseok Kim, Timothy Mathew Philip |
2025-06-10 |
| 12324237 |
Diffusion-break region in stacked-FET integrated circuit device |
Ruilong Xie, Daniel Schmidt, Tsung-Sheng Kang |
2025-06-03 |
| 12317537 |
Reduced parasitic capacitance semiconductor device containing at least one local interconnect passthrough structure |
Ruilong Xie, Dechao Guo, Junli Wang |
2025-05-27 |
| 12317764 |
Uniform voltage drop in arrays of memory devices |
Injo Ok, Soon-Cheon Seo, Youngseok Kim |
2025-05-27 |
| 12310263 |
Phase change memory gaps |
Injo Ok, Soon-Cheon Seo, Oleg Gluschenkov |
2025-05-20 |
| 12293469 |
Virtual reality design navigation using a temporal collaboration dependency map |
Jeremy R. Fox, Martin G. Keen, Bahman Hekmatshoartabari |
2025-05-06 |
| 12268016 |
Buried power rail formation for vertical field effect transistors |
Ruilong Xie, Junli Wang, Brent A. Anderson, Chen Zhang, Heng Wu |
2025-04-01 |
| 12262552 |
Source/drain epitaxy process in stacked FET |
Tsung-Sheng Kang, Daniel Schmidt, Ruilong Xie |
2025-03-25 |
| 12255106 |
Multi-Vt nanosheet devices |
Jingyun Zhang, Takashi Ando, Choonghyun Lee |
2025-03-18 |
| 12245530 |
Phase change memory with concentric ring-shaped heater |
Kangguo Cheng, Carl Radens, Juntao Li, Ruilong Xie, Praneet Adusumilli +1 more |
2025-03-04 |
| 12237328 |
Minimizing shorting between FinFET epitaxial regions |
Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2025-02-25 |
| 12236539 |
Contextual positioning in virtual space |
Martin G. Keen, Jeremy R. Fox, Bahman Hekmatshoartabari |
2025-02-25 |
| 12230676 |
Nanosheet device with tri-layer bottom dielectric isolation |
Xin Miao, Jingyun Zhang, Choonghyun Lee |
2025-02-18 |
| 12225835 |
Resistive switching device having a protective electrode ring |
Takashi Ando, Ruilong Xie, Pouya Hashemi |
2025-02-11 |
| 12219884 |
Phase change memory with conductive rings |
Kangguo Cheng, Carl Radens, Juntao Li, Ruilong Xie, Praneet Adusumilli +3 more |
2025-02-04 |
| 12191352 |
Using different work-functions to reduce gate-induced drain leakage current in stacked nanosheet transistors |
Takashi Ando, Ruilong Xie, Pouya Hashemi |
2025-01-07 |
