Issued Patents 2025
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431469 | Vertically stacked FET with strained channel | Shogo Mochizuki, Kangguo Cheng | 2025-09-30 |
| 12402391 | Stressed material within gate cut region | Huimei Zhou, Andrew M. Greene, Michael P. Belyansky, Oleg Gluschenkov, Robert R. Robison +2 more | 2025-08-26 |
| 12402545 | Stacked cross-point phase change memory | Kangguo Cheng, Carl Radens, Ruilong Xie | 2025-08-26 |
| 12396247 | Work function metal patterning for nanosheet CFETs | Ruilong Xie, Chen Zhang, Kangguo Cheng | 2025-08-19 |
| 12396225 | Method to release nano sheet after nano sheet fin recess | Chanro Park, Kangguo Cheng, Ruilong Xie, Choonghyun Lee | 2025-08-19 |
| 12382708 | Vertical stacked nanosheet CMOS transistors with different work function metals | Kangguo Cheng, Ruilong Xie, Chanro Park | 2025-08-05 |
| 12376503 | Phase change material including deuterium | Kangguo Cheng, Arthur Roy Gasasira, LOUIS ZUOGUANG LIU, Amlan Majumdar | 2025-07-29 |
| 12369379 | Nanosheet transistor | Kangguo Cheng, Heng Wu, Peng Xu | 2025-07-22 |
| 12362004 | Scaled 2T DRAM | Min Gyu Sung, Julien Frougier, Ruilong Xie, Chanro Park | 2025-07-15 |
| RE50494 | Self-forming embedded diffusion barriers | Cyril Cabral, Jr., Daniel C. Edelstein, Takeshi Nogami | 2025-07-15 |
| 12324184 | Replacement gate cross-couple for static random-access memory scaling | Ruilong Xie, Carl Radens, Kangguo Cheng, Veeraraghavan S. Basker | 2025-06-03 |
| 12317762 | Vertical phase change memory device | Kangguo Cheng, Carl Radens, Ruilong Xie | 2025-05-27 |
| 12317763 | Memory cell with comb-shaped electrodes | Kangguo Cheng, Carl Radens, Ruilong Xie | 2025-05-27 |
| 12310262 | Phase change memory with encapsulated phase change element | Dexin Kong, Kangguo Cheng, Zheng Xu | 2025-05-20 |
| 12310265 | Dome-shaped phase change memory mushroom cell | Kangguo Cheng, LOUIS ZUOGUANG LIU, Arthur Roy Gasasira | 2025-05-20 |
| 12310267 | ReRAM module with intermediate electrode | Kangguo Cheng, Kevin W. Brew, Dexin Kong | 2025-05-20 |
| 12279452 | Stacked complementary transistor structure for three-dimensional integration | Kangguo Cheng, Shogo Mochizuki | 2025-04-15 |
| 12274186 | Low current phase-change memory device | Kangguo Cheng, Ruilong Xie, Julien Frougier | 2025-04-08 |
| 12274185 | Phase change memory cell having pillar bottom electrode with improved thermal insulation | Ruilong Xie, Kangguo Cheng, Carl Radens | 2025-04-08 |
| 12256653 | PCM cell with nanoheater surrounded with airgaps | Kangguo Cheng, Dexin Kong, Ruilong Xie | 2025-03-18 |
| 12245530 | Phase change memory with concentric ring-shaped heater | Kangguo Cheng, Carl Radens, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +1 more | 2025-03-04 |
| 12224203 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more | 2025-02-11 |
| 12219885 | Reducing contact resistance of phase change memory bridge cell | Kangguo Cheng, Zuoguang Liu, Arthur Roy Gasasira | 2025-02-04 |
| 12219884 | Phase change memory with conductive rings | Kangguo Cheng, Carl Radens, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +3 more | 2025-02-04 |
| 12207570 | Phase change memory with multi-level programming | Ching-Tzu Chen, Kangguo Cheng, Carl Radens | 2025-01-21 |