Issued Patents 2025
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE50613 | FinFET gate cut after dummy gate removal | John R. Sporre, Siva Kanakasabapathy, Jeffrey C. Shearer, Nicole Saulnier | 2025-09-30 |
| 12432960 | Wraparound contact with reduced distance to channel | Ruilong Xie, Reinaldo Vega, Yao Yao, Veeraraghavan S. Basker, Pietro Montanini +2 more | 2025-09-30 |
| 12426314 | Strain generation and anchoring in gate-all-around field effect transistors | Julien Frougier, Sung-Dae Suk, Kangguo Cheng, Ruilong Xie | 2025-09-23 |
| 12417944 | Formation of trench silicide source or drain contacts without gate damage | Ruilong Xie, Laertis Economikos, Veeraraghavan S. Basker, Chanro Park, Hui Zang | 2025-09-16 |
| 12402391 | Stressed material within gate cut region | Huimei Zhou, Michael P. Belyansky, Oleg Gluschenkov, Robert R. Robison, Juntao Li +2 more | 2025-08-26 |
| 12317555 | Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor | Julien Frougier, Sagarika Mukesh, Ruqiang Bao, Jingyun Zhang, Nicolas Loubet +1 more | 2025-05-27 |
| 12310054 | Late replacement bottom isolation for nanosheet devices | Ruilong Xie, Julien Frougier, Veeraraghavan S. Basker | 2025-05-20 |
| 12255204 | Vertical FET replacement gate formation with variable fin pitch | Ruilong Xie, Yao Yao, Veeraraghavan S. Basker | 2025-03-18 |
| 12249643 | Stacked planar field effect transistors with 2D material channels | Andrew Gaul, Julien Frougier, Ruilong Xie, Christopher J. Waskiewicz | 2025-03-11 |
| 12224312 | Field effect transistors with bottom dielectric isolation | Julien Frougier, Ruilong Xie, Veeraraghavan S. Basker | 2025-02-11 |