Issued Patents 2025
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12431469 | Vertically stacked FET with strained channel | Kangguo Cheng, Juntao Li | 2025-09-30 |
| 12419079 | Field effect transistor with backside source/drain | Ruilong Xie, Lawrence A. Clevenger, Brent A. Anderson, Kisik Choi, Su Chen Fan +1 more | 2025-09-16 |
| 12402352 | Unipolar-FET implementation in stacked-FET CMOS | Gen Tsutsui | 2025-08-26 |
| 12396212 | Gate all-around device with through-stack nanosheet 2D channel | Tao Li, Ardasheir Rahman, Tsung-Sheng Kang | 2025-08-19 |
| 12279452 | Stacked complementary transistor structure for three-dimensional integration | Kangguo Cheng, Juntao Li | 2025-04-15 |
| 12268020 | Source or drain template for reducing strain loss in spaced-apart nanosheet channels | Nicolas Loubet | 2025-04-01 |
| 12268026 | High aspect ratio contact structure with multiple metal stacks | Junli Wang, Brent A. Anderson, Terence B. Hook, Indira Seshadri, Albert M. Young +2 more | 2025-04-01 |
| 12261173 | Semiconductor device with strained channel | Nicolas Loubet | 2025-03-25 |
| 12250835 | Isolation between vertically stacked nanosheet devices | Sanjay C. Mehta | 2025-03-11 |
| 12237325 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Peng Xu, Nicolas Loubet | 2025-02-25 |
| 12191208 | Dual strained semiconductor substrate and patterning | Kangguo Cheng, Juntao Li | 2025-01-07 |