Issued Patents 2025
Showing 26–50 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12336279 | Fin stack including tensile-strained and compressively strained fin portions | Julien Frougier, Ruilong Xie, Chanro Park | 2025-06-17 |
| 12327798 | Physical unclonable function | Eric R. Miller, Fee Li Lie, Gauri Karve, Marc A. Bergendahl, John R. Sporre | 2025-06-10 |
| 12328916 | CPP-agnostic source-drain contact formation for gate-all-around devices with dielectric isolation | Julien Frougier, Ruilong Xie, Chanro Park, Oleg Gluschenkov | 2025-06-10 |
| 12324197 | Spin-based gate-all-around transistors | Julien Frougier, Ruilong Xie, Chanro Park, Andrew Gaul, Min Gyu Sung | 2025-06-03 |
| 12324184 | Replacement gate cross-couple for static random-access memory scaling | Ruilong Xie, Carl Radens, Veeraraghavan S. Basker, Juntao Li | 2025-06-03 |
| 12324234 | Fork sheet device with better electrostatic control | Ruilong Xie, Julien Frougier, Chanro Park | 2025-06-03 |
| 12317762 | Vertical phase change memory device | Juntao Li, Carl Radens, Ruilong Xie | 2025-05-27 |
| 12317509 | Stacked spin-orbit-torque magnetoresistive random-access memory | Julien Frougier, Dimitri Houssameddine, Ruilong Xie | 2025-05-27 |
| 12317514 | Resistive random-access memory structures with stacked transistors | Min Gyu Sung, Julien Frougier, Ruilong Xie, Chanro Park, Soon-Cheon Seo | 2025-05-27 |
| 12317763 | Memory cell with comb-shaped electrodes | Juntao Li, Carl Radens, Ruilong Xie | 2025-05-27 |
| 12310061 | Nanosheet transistor devices with different active channel widths | Ruilong Xie, Julien Frougier, Chanro Park, Cheng Chi, Jinning Liu | 2025-05-20 |
| 12310267 | ReRAM module with intermediate electrode | Juntao Li, Kevin W. Brew, Dexin Kong | 2025-05-20 |
| 12310265 | Dome-shaped phase change memory mushroom cell | Juntao Li, LOUIS ZUOGUANG LIU, Arthur Roy Gasasira | 2025-05-20 |
| 12310262 | Phase change memory with encapsulated phase change element | Dexin Kong, Juntao Li, Zheng Xu | 2025-05-20 |
| 12310064 | Isolation pillar structures for stacked device structures | Ruilong Xie, Julien Frougier, Chanro Park, Min Gyu Sung | 2025-05-20 |
| 12279452 | Stacked complementary transistor structure for three-dimensional integration | Shogo Mochizuki, Juntao Li | 2025-04-15 |
| 12274186 | Low current phase-change memory device | Juntao Li, Ruilong Xie, Julien Frougier | 2025-04-08 |
| 12274185 | Phase change memory cell having pillar bottom electrode with improved thermal insulation | Juntao Li, Ruilong Xie, Carl Radens | 2025-04-08 |
| 12262549 | Transistor device having a comb-shaped channel region to increase the effective gate width | — | 2025-03-25 |
| 12256653 | PCM cell with nanoheater surrounded with airgaps | Juntao Li, Dexin Kong, Ruilong Xie | 2025-03-18 |
| 12255651 | Reconfigurable ring oscillator (RO) physical unclonable function (PUF) | Julien Frougier, Carl Radens, Ruilong Xie | 2025-03-18 |
| 12256554 | Embedded MRAM integrated with super via and dummy fill | Ruilong Xie, Dimitri Houssameddine, Julien Frougier | 2025-03-18 |
| 12245517 | MRAM stack with reduced height | Ruilong Xie, Dimitri Houssameddine, Julien Frougier, Bruce B. Doris | 2025-03-04 |
| 12245530 | Phase change memory with concentric ring-shaped heater | Carl Radens, Juntao Li, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +1 more | 2025-03-04 |
| 12237328 | Minimizing shorting between FinFET epitaxial regions | Balasubramanian Pranatharthiharan, Alexander Reznicek, Charan V. Surisetty | 2025-02-25 |