Issued Patents 2023
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855215 | Semiconductor device structure with high contact area | Shuen-Shin Liang, Pang-Yen Tsai, Keng-Chu Lin, Sung-Li Wang | 2023-12-26 |
| 11855192 | Semiconductor device and manufacturing method thereof | Han-Yu Lin, Fang-Wei Lee, Kai Tak Lam, Raghunath PUTIKAM, Tzer-Min Shen +4 more | 2023-12-26 |
| 11843041 | Gate etch back with reduced loading effect | Yi-Chen Lo, Jung-Hao Chang, Li-Te Lin | 2023-12-12 |
| 11830928 | Inner spacer formation in multi-gate transistors | Han-Yu Lin, Chansyun David Yang, Tze-Chung Lin, Fang-Wei Lee, Fo-Ju Lin +1 more | 2023-11-28 |
| 11810960 | Contact structures in semiconductor devices | Sung-Li Wang, Hsu-Kai Chang, Jhih-Rong Huang, Yen-Tien Tung, Chia-Hung Chu +1 more | 2023-11-07 |
| 11707803 | Apparatus and method for directional etch with micron zone beam and angle control | Chansyun David Yang, Li-Te Lin | 2023-07-25 |
| 11651972 | Method of manufacturing semiconductor devices using directional process | Ya-Wen Yeh, Yu-Tien Shen, Shih-Chun Huang, Po-Chin Chang, Wei-Liang Lin +4 more | 2023-05-16 |
| 11652152 | Capping structures in semiconductor devices | Po-Chin Chang, Ming-Huan Tsai, Li-Te Lin | 2023-05-16 |
| 11646234 | Method for FinFET fabrication and structure thereof | Han-Yu Lin, Yi-Ruei Jhan, Fang-Wei Lee, Tze-Chung Lin, Chao-Hsien Huang +2 more | 2023-05-09 |
| 11626506 | Reducing pattern loading in the etch-back of metal gate | Po-Chin Chang, Wei-Hao Wu, Li-Te Lin | 2023-04-11 |
| 11605728 | Semiconductor device structure with inner spacer layer | Han-Yu Lin, Chansyun David Yang, Fang-Wei Lee, Tze-Chung Lin, Li-Te Lin | 2023-03-14 |
| 11597053 | Polishing pad, method for manufacturing polishing pad, and polishing method | Chi-Hao Huang, Hsuan-Pang Liu, Yuan-Chun Sie, Cheng-Chung Chien | 2023-03-07 |
| 11581222 | Via in semiconductor device structure | Chun-Jui Huang, Li-Te Lin | 2023-02-14 |
| 11551966 | Method of forming semiconductor structure having layer with re-entrant profile | Yi-Shan Chen, Chan Syun David Yang, Li-Te Lin | 2023-01-10 |
| 11545397 | Spacer structure for semiconductor device and method for forming the same | Han-Yu Lin, Jhih-Rong Huang, Yen-Tien Tung, Tzer-Min Shen, Fu-Ting Yen +3 more | 2023-01-03 |