Issued Patents 2023
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855192 | Semiconductor device and manufacturing method thereof | Han-Yu Lin, Fang-Wei Lee, Kai Tak Lam, Raghunath PUTIKAM, Tzer-Min Shen +4 more | 2023-12-26 |
| 11843041 | Gate etch back with reduced loading effect | Yi-Chen Lo, Jung-Hao Chang, Pinyen Lin | 2023-12-12 |
| 11830928 | Inner spacer formation in multi-gate transistors | Han-Yu Lin, Chansyun David Yang, Tze-Chung Lin, Fang-Wei Lee, Fo-Ju Lin +1 more | 2023-11-28 |
| 11791161 | Pattern fidelity enhancement | Yu-Tien Shen, Ya-Wen Yeh, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen +3 more | 2023-10-17 |
| 11776850 | Semiconductor device with reduced loading effect | Wei-Lun Chen, Chao-Hsien Huang | 2023-10-03 |
| 11769822 | Semiconductor device and method for manufacturing the same | Jung-Hao Chang | 2023-09-26 |
| 11728221 | Air spacers in transistors and methods forming same | Yi-Lun Chen, Chao-Hsien Huang, Chun-Hsiung Lin | 2023-08-15 |
| 11707803 | Apparatus and method for directional etch with micron zone beam and angle control | Chansyun David Yang, Pinyen Lin | 2023-07-25 |
| 11652152 | Capping structures in semiconductor devices | Po-Chin Chang, Ming-Huan Tsai, Pinyen Lin | 2023-05-16 |
| 11651972 | Method of manufacturing semiconductor devices using directional process | Ya-Wen Yeh, Yu-Tien Shen, Shih-Chun Huang, Po-Chin Chang, Wei-Liang Lin +4 more | 2023-05-16 |
| 11646234 | Method for FinFET fabrication and structure thereof | Han-Yu Lin, Yi-Ruei Jhan, Fang-Wei Lee, Tze-Chung Lin, Chao-Hsien Huang +2 more | 2023-05-09 |
| 11626506 | Reducing pattern loading in the etch-back of metal gate | Po-Chin Chang, Wei-Hao Wu, Pinyen Lin | 2023-04-11 |
| 11605728 | Semiconductor device structure with inner spacer layer | Han-Yu Lin, Chansyun David Yang, Fang-Wei Lee, Tze-Chung Lin, Pinyen Lin | 2023-03-14 |
| 11581222 | Via in semiconductor device structure | Chun-Jui Huang, Pinyen Lin | 2023-02-14 |
| 11551966 | Method of forming semiconductor structure having layer with re-entrant profile | Yi-Shan Chen, Chan Syun David Yang, Pinyen Lin | 2023-01-10 |
| 11545397 | Spacer structure for semiconductor device and method for forming the same | Han-Yu Lin, Jhih-Rong Huang, Yen-Tien Tung, Tzer-Min Shen, Fu-Ting Yen +3 more | 2023-01-03 |