Issued Patents 2023
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855178 | Semiconductor devices having air-gap | Pei-Hsun Wang, Chih-Chao Chou, Chia-Hao Chang, Chih-Hao Wang | 2023-12-26 |
| 11837506 | FinFET devices and methods of forming the same | Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Pei-Hsun Wang | 2023-12-05 |
| 11777033 | Transistors having vertical nanostructures | Pei-Hsun Wang, Cheng-Ting Chung, Chih-Hao Wang | 2023-10-03 |
| 11777009 | Contacts for highly scaled transistors | Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Jean-Pierre Colinge +2 more | 2023-10-03 |
| 11776854 | Semiconductor structure with hybrid nanostructures | Pei-Hsun Wang, Chih-Hao Wang, Chih-Chao Chou | 2023-10-03 |
| 11764065 | Methods of forming silicide contact in field-effect transistors | Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang | 2023-09-19 |
| 11735666 | Gate all around structure with additional silicon layer and method for forming the same | Chen-Han Wang, Pei-Hsun Wang, Chih-Hao Wang | 2023-08-22 |
| 11728221 | Air spacers in transistors and methods forming same | Yi-Lun Chen, Chao-Hsien Huang, Li-Te Lin | 2023-08-15 |
| 11721594 | Dual channel gate all around transistor device and fabrication methods thereof | Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou +1 more | 2023-08-08 |
| 11695076 | FET with wrap-around silicide and fabrication methods thereof | Pei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang +1 more | 2023-07-04 |
| 11664230 | Semiconductor device structure with silicide | Jung-Hung Chang, Shih-Cheng Chen, Kuo-Cheng Chiang, Chih-Hao Wang | 2023-05-30 |
| 11637207 | Gate-all-around structure and methods of forming the same | Pei-Hsun Wang, Chih-Hao Wang | 2023-04-25 |
| 11563104 | Semiconductor devices having air-gap spacers | Pei-Hsun Wang, Chih-Chao Chou, Chia-Hao Chang, Chih-Hao Wang | 2023-01-24 |