| 11527535 |
Variable sheet forkFET device |
Julien Frougier, Ruilong Xie, Kangguo Cheng |
2022-12-13 |
| 11476163 |
Confined gate recessing for vertical transport field effect transistors |
Ruilong Xie, Sung-Dae Suk, Heng Wu |
2022-10-18 |
| 11456181 |
Cross-bar fin formation |
Kangguo Cheng, Ruilong Xie, Juntao Li |
2022-09-27 |
| 11443982 |
Formation of trench silicide source or drain contacts without gate damage |
Andrew M. Greene, Ruilong Xie, Laertis Economikos, Veeraraghavan S. Basker, Hui Zang |
2022-09-13 |
| 11437489 |
Techniques for forming replacement metal gate for VFET |
Ruilong Xie, Heng Wu, Kangguo Cheng |
2022-09-06 |
| 11410879 |
Subtractive back-end-of-line vias |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang |
2022-08-09 |
| 11380581 |
Interconnect structures of semiconductor devices having a via structure through an upper conductive line |
Andre P. Labonte, Catherine B. Labelle |
2022-07-05 |
| 11328954 |
Bi metal subtractive etch for trench and via formation |
Yann Mignot, Chih-Chao Yang, Injo Ok, Hsueh-Chung Chen |
2022-05-10 |
| 11315799 |
Back end of line structures with metal lines with alternating patterning and metallization schemes |
Ruilong Xie, Chih-Chao Yang, Kangguo Cheng, Juntao Li |
2022-04-26 |
| 11315872 |
Self-aligned top via |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Kisik Choi, Chih-Chao Yang |
2022-04-26 |
| 11309220 |
Methods, apparatus, and manufacturing system for self-aligned patterning of a vertical transistor |
Ruilong Xie, Min Gyu Sung |
2022-04-19 |
| 11289375 |
Fully aligned interconnects with selective area deposition |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2022-03-29 |
| 11282838 |
Stacked gate structures |
Chen Zhang, Dechao Guo, Junli Wang, Ruilong Xie, Kangguo Cheng +5 more |
2022-03-22 |
| 11270913 |
BEOL metallization formation |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Brent A. Anderson, Somnath Ghosh |
2022-03-08 |
| 11264481 |
Self-aligned source and drain contacts |
Kangguo Cheng, Ruilong Xie, Juntao Li |
2022-03-01 |
| 11257718 |
Contact structures |
Stan Tsai |
2022-02-22 |
| 11244853 |
Fully aligned via interconnects with partially removed etch stop layer |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang |
2022-02-08 |
| 11244897 |
Back end of line metallization |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Somnath Ghosh, Chih-Chao Yang |
2022-02-08 |
| 11244854 |
Dual damascene fully aligned via in interconnects |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2022-02-08 |
