| 10811528 |
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs |
Mona A. Ebrish, Xuefeng Liu, Brent A. Anderson, Junli Wang |
2020-10-20 |
| 10748893 |
Electrostatic discharge devices and methods of manufacture |
Junjun Li, Theodorus E. Standaert, Tenko Yamashita |
2020-08-18 |
| 10741544 |
Integration of electrostatic discharge protection into vertical fin technology |
Brent A. Anderson, Terence B. Hook, Xuefeng Liu, Junli Wang |
2020-08-11 |
| 10741647 |
Conformal doping for punch through stopper in fin field effect transistor devices |
Sivananda K. Kanakasabapathy, Fee Li Lie, Tenko Yamashita |
2020-08-11 |
| 10685866 |
Fin isolation to mitigate local layout effects |
Huimei Zhou, Gen Tsutsui, Andrew M. Greene, Dechao Guo, Robert R. Robison +2 more |
2020-06-16 |
| 10658224 |
Method of fin oxidation by flowable oxide fill and steam anneal to mitigate local layout effects |
Huimei Zhou, Gen Tsutsui, Veeraraghavan S. Basker, Andrew M. Greene, Dechao Guo +1 more |
2020-05-19 |
| 10629443 |
Bottom source/drain silicidation for vertical field-effect transistor (FET) |
Brent A. Anderson, Terence B. Hook, Fee Li Lie, Junli Wang |
2020-04-21 |
| 10593802 |
Forming a sacrificial liner for dual channel devices |
Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy, Peng Xu |
2020-03-17 |
| 10573727 |
Vertical transistor device |
Brent A. Anderson, Fee Li Lie, Shogo Mochizuki, Junli Wang |
2020-02-25 |
